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NSS60600MZ4T1G

Onsemi

NSS60600MZ4T1G by Onsemi

NSS60600MZ4T1G by Onsemi is a PNP BJT transistor with 60V VCEO, 6A IC, and 100MHz fT. Ideal for switching applications, it has a small outline package with Gull Wing terminals for surface mounting. With a max power dissipation of 2W and operating temp up to 150°C, it offers fast turn-on/off times of 280ns/685ns.

Median Price

$0.411

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 3 parts In-Stock

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$0.175

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Newark

USA . 5,715 parts In-Stock

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$0.783

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$0.371

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$0.328

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$0.783

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DigiKey

USA . 7,950 parts In-Stock

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$0.890

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$0.360

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$0.249

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$0.186

7,950

$0.890

$0.360

$0.249

$0.186

Mouser Electronics

USA . 2,714 parts In-Stock

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$0.890

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$0.360

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$0.248

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2,714

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Farnell

UK . 15,341 parts In-Stock

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Verical

USA . 4,000 parts In-Stock

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$0.271

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Master Electronics

USA . 4,000 parts In-Stock

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$0.230

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$0.181

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$0.181

Element14

Singapore . 1,155 parts In-Stock

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$0.513

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$0.400

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Rochester

USA . 25 parts In-Stock

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$0.452

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$0.375

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$0.334

25

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$0.452

$0.375

$0.334

RS (Exports)

UK . 20 parts In-Stock

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Chip1Stop

Japan . 3 parts In-Stock

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Digiode

USA . 2,188 parts In-Stock

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Nova Conductors

Japan . 870 parts In-Stock

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870

$0.271

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Maritex

Poland . 5,998 parts In-Stock

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$0.473

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$0.264

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$0.219

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5,998

$0.473

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Ozdisan Elektronik

Türkiye . 9,914 parts In-Stock

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$66.091

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Chip Stock

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Flip Electronics

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Vyrian

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IBS Electronics

USA . 4,000 parts In-Stock

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$0.322

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$0.255

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NAC Semi

USA . 4,000 parts In-Stock

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$0.285

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$0.263

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ACDS - Activité Composants Distribution Service

France . 1,000 parts In-Stock

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Speed Components Ltd

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A&K Electronics

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Rotakorn

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Bristol Electronics

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Distributors (Availability)

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Semicontronic

India . 6,578 parts In-Stock

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$0.161

100+ parts

$0.157

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$0.156

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Ampacity Inc.

Singapore . 6,173 parts In-Stock

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Corphita

USA . 2,395 parts In-Stock

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Corohmni

South Africa . 433 parts In-Stock

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Argo Parts USA

USA . 318 parts In-Stock

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$0.260

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Continental Prestige Electronics

USA . 3,620 parts In-Stock

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$0.584

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$0.329

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Aztec Data Supply Inc.

USA . 1,424 parts In-Stock

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$0.910

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Perfect Parts

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GreenTree Electronics

Israel . 58,790 parts In-Stock

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Kepictronics

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iodParts Technologies Inc.

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Problanco Electronics

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Kulean Microsystems

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Futuretech Components

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SupplyDigital Components

Austria . 5,706 parts In-Stock

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Lixinc

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A-Z Elektronik GmbH

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Cyclops Electronics Ltd (Excess)

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Glotronic Ltd.

UK . 800 parts In-Stock

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UHIMA Technologies

Türkiye . 101 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$0.265

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$0.252

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Overview

Unlock the power of high-quality small signal bipolar junction transistors with the NSS60600MZ4T1G by Onsemi. Manufactured by a trusted industry leader, this PNP transistor offers switching capabilities in a compact package. Ideal for a range of applications, this transistor provides reliability and efficiency for your electronic projects. Experience the value and benefits of Onsemi's cutting-edge technology with the NSS60600MZ4T1G, delivering top performance and innovation in every use.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various environments and applications.

Polarity or Channel Type: PNP

PNP transistors are commonly used in switching applications, making this transistor suitable for switching circuits.

Maximum Power Dissipation (Abs): 2 W

Can handle high power dissipation, allowing for reliable performance in demanding applications.

Maximum Collector-Emitter Voltage: 60 V

Can withstand high voltage levels, making it suitable for power switching applications.

Maximum Collector Current (IC): 6 A

Capable of handling high current levels, making it suitable for power switching and amplification applications.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency allows for fast switching speeds and high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) NSS60600MZ4T1G attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

6 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

70

JEDEC-95 Code:

TO-261AA

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum Turn Off Time (toff):

685 ns

Maximum Turn On Time (ton):

280 ns

Trade Compliance

NSS60600MZ4T1G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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