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NRVUD620CTT4G

Onsemi

NRVUD620CTT4G by Onsemi

NRVUD620CTT4G by Onsemi is a common cathode diode with ultra-fast recovery time of 0.035 us, ideal for rectification applications. With a max output current of 3A and max repetitive peak reverse voltage of 200V, it operates b/w -65 to 175 °C. This small outline package diode features gull wing terminals and matte tin finish for surface mount assembly.

Median Price

$0.256

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

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DigiKey

USA . 7,857 parts In-Stock

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$0.320

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$0.320

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Rochester

USA . 7,857 parts In-Stock

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$0.256

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$0.213

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$0.190

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$0.256

$0.213

$0.190

Verical

USA . 6,751 parts In-Stock

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$0.237

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$0.237

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Bristol Electronics

USA . 2,452 parts In-Stock

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$0.600

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$0.222

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$0.156

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2,452

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Flip Electronics

USA . 177,500 parts In-Stock

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Vyrian

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Q Components

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Digiode

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Microfarads

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ComSIT Distribution GmbH

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AZTECH Wire

Italy . 207 parts In-Stock

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$8.210

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RC Electronics

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Perfect Parts

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GreenTree Electronics

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TANS Electronics

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Kulean Microsystems

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Formix International (Excess)

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SupplyDigital Components

Austria . 2,153 parts In-Stock

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Corphita

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Problanco Electronics

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UHIMA Technologies

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Corohmni

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Overview

Discover the NRVUD620CTT4G by Onsemi, a top-quality diode and rectifier that offers ultra-fast recovery for a wide range of applications. Manufactured by Onsemi, known for their superior products, this diode features common cathode configuration with 2 elements in a compact rectangular package. Ideal for high-speed circuits, this diode operates between -65 °C to 175°C with a maximum reverse recovery time of 0.035 us. With a maximum output current of 3A and peak non-repetitive forward current of 50A, this diode provides reliable performance and efficiency. Upgrade your electronics with the NRVUD620CTT4G and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the diodes, ensuring reliable performance and durability.

Config: COMMON CATHODE, 2 ELEMENTS

Allows for easy connection in circuits and provides efficient current flow.

Maximum Reverse Recovery Time: 0.035 us

Ultra fast recovery time ensures quick switching and minimal power loss.

Application: ULTRA FAST RECOVERY

Ideal for applications where fast recovery time is essential, such as high frequency circuits.

Maximum Forward Voltage (VF): 0.96 V

Low forward voltage drop results in lower power dissipation and more efficient operation.

Maximum Output Current: 3 A

Capable of handling high output currents, suitable for various electronic applications.

Technical Specifications

Diodes & Rectifiers NRVUD620CTT4G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Additional Features:

FREE WHEELING DIODE, LOW LEAKAGE CURRENT

Application:

ULTRA FAST RECOVERY

Case Connection:

CATHODE

Config:

COMMON CATHODE, 2 ELEMENTS

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

.96 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

50 A

No. of Elements:

2

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

3 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

200 V

Maximum Reverse Recovery Time:

.035 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVUD620CTT4G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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