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NRVTS10100EMFST3G

Onsemi

NRVTS10100EMFST3G by Onsemi

NRVTS10100EMFST3G by Onsemi is a Schottky rectifier diode with a max forward voltage of 0.61V and output current of 10A. It has a max repetitive peak reverse voltage of 100V, making it suitable for applications requiring high efficiency power conversion in electronics. This surface mount diode can operate at temperatures up to 175 °C, ideal for various industrial and automotive electronic systems.

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AZTECH Wire

Italy . 802 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 21,323 parts In-Stock

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TANS Electronics

Latvia . 7,035 parts In-Stock

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SupplyDigital Components

Austria . 3,991 parts In-Stock

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UHIMA Technologies

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Kulean Microsystems

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Overview

Discover the NRVTS10100EMFST3G by Onsemi, a high-quality Schottky rectifier diode that offers superior performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications. With a maximum forward voltage of only 0.61V and a maximum output current of 10A, this diode provides efficient power conversion with minimal energy loss. Experience the benefits of fast switching speed and high temperature resistance, making it ideal for demanding electronic designs. Upgrade your projects with the NRVTS10100EMFST3G and enjoy reliable performance every time.

Feature Benefit Bullets

Config: SINGLE

Single configuration makes it easy to install and use without complications.

Surface Mount: YES

Surface mount capability allows for easy PCB integration and saves space.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliability in varying environmental conditions.

Terminal Finish: MATTE TIN

Matte tin terminal finish provides good solderability and corrosion resistance.

Maximum Time At Peak Reflow Temperature (s): 30

Short peak reflow time helps prevent overheating and damage during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature ensures proper solder melting and joint formation.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting alternating current (AC) to direct current (DC) efficiently.

Maximum Forward Voltage (VF): 0.61 V

Low forward voltage drop results in minimal power loss and higher efficiency.

Maximum Output Current: 10 A

High output current rating allows for handling of large loads or surge currents.

Technology: SCHOTTKY

Schottky technology offers fast switching speed and low voltage drop for improved performance.

Maximum Repetitive Peak Reverse Voltage: 100 V

High reverse voltage rating provides protection against voltage spikes and surges.

Maximum Non Repetitive Peak Forward Current: 200 A

High non-repetitive peak forward current handling capability for surge protection.

Technical Specifications

Diodes & Rectifiers NRVTS10100EMFST3G attributes and parameters. Explore more Diodes & Rectifiers devices from Onsemi

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

.61 V

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

200 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

175 Cel

Maximum Output Current:

10 A

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

100 V

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Technology:

SCHOTTKY

Terminal Finish:

MATTE TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

NRVTS10100EMFST3G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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