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NLVVHC1GT32DFT1G

Onsemi

NLVVHC1GT32DFT1G by Onsemi

NLVVHC1GT32DFT1G by Onsemi is a CMOS Logic Gate with 2 inputs, 10 ns propagation delay at 5V. It operates in temperatures from -55 to 125 °C and is AEC-Q100 screened for automotive applications. This small outline package has a thin profile, matte tin finish, and dual terminal position.

Median Price

$0.137

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 100 parts In-Stock

1+ parts

$0.249

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$0.099

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100

$0.249

$0.099

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Chip1Stop

Japan . 9,700 parts In-Stock

1+ parts

-

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$0.137

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$0.069

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$0.039

9,700

-

$0.137

$0.069

$0.039

Verical

USA . 6,500 parts In-Stock

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$0.069

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$0.037

6,500

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$0.069

$0.037

Distributors (In-Stock)

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Digiode

USA . 50 parts In-Stock

1+ parts

$0.325

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50

$0.325

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Flip Electronics

USA . 1,972,633 parts In-Stock

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Cyclops Electronics Ltd

UK . 48,200 parts In-Stock

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Vyrian

USA . 6,127 parts In-Stock

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Distributors (Availability)

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Corohmni

South Africa . 367 parts In-Stock

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$0.069

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367

$0.069

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Vigor

Singapore . 886 parts In-Stock

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$0.130

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886

$0.130

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Corphita

USA . 2,329 parts In-Stock

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$0.308

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2,329

$0.308

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Microchip USA

USA . 4,648 parts In-Stock

1+ parts

$2.860

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$2.860

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AZTECH Wire

Italy . 385 parts In-Stock

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$20.630

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Perfect Parts

USA . 207,659 parts In-Stock

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Metaverse IC Inc.

Canada . 126,000 parts In-Stock

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Kepictronics

USA . 48,000 parts In-Stock

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Authorized Procurement Solutions

USA . 47,800 parts In-Stock

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ChipstoGo Electronic ltd

UK . 42,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 27,880 parts In-Stock

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GreenTree Electronics

Israel . 22,900 parts In-Stock

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Problanco Electronics

Mexico . 7,504 parts In-Stock

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TANS Electronics

Latvia . 7,131 parts In-Stock

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SupplyDigital Components

Austria . 6,678 parts In-Stock

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Kulean Microsystems

USA . 2,524 parts In-Stock

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Infinite Electronics LLP (Excess)

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UHIMA Technologies

Türkiye . 249 parts In-Stock

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Formix International (Excess)

India . 83 parts In-Stock

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Overview

Discover the innovative NLVVHC1GT32DFT1G logic gate by Onsemi, a high-quality product designed to meet the demanding needs of various applications. Manufactured with precision and expertise, this logic gate offers unparalleled performance and reliability. From automotive to industrial, this product is versatile and efficient, providing customers with the value and benefits they seek. Trust in Onsemi's reputation for excellence and experience the advantages of this logic gate in your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable and cost-effective material for housing the logic gate, ensuring long-lasting performance.

Propagation Delay At Nominal Supply: 10 ns

Fast signal propagation, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Allows for easy and efficient integration onto circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage level that is widely compatible with various electronic systems.

Maximum Operating Temperature: 125 °C

Wide temperature range allows for operation in harsh environmental conditions.

Technology: CMOS

Utilizes CMOS technology for efficient power consumption and high noise immunity, enhancing overall performance.

Technical Specifications

Logic Gates NLVVHC1GT32DFT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

10 ns

Propagation Delay (tpd):

15.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Sub-Category:

Gate

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLVVHC1GT32DFT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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