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NLV74VHC1G07DTT1G

Onsemi

NLV74VHC1G07DTT1G by Onsemi

NLV74VHC1G07DTT1G by Onsemi is a CMOS Logic Gate with 5 terminals, operating at -55 to 125 °C. It has a Propagation Delay of 14.5 ns and can handle Load Capacitance up to 50 pF. Ideal for military applications due to AEC-Q100 screening level and small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,475 parts In-Stock

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Digiode

USA . 1,928 parts In-Stock

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Vigor

Singapore . 230 parts In-Stock

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$0.200

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AZTECH Wire

Italy . 193 parts In-Stock

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Authorized Procurement Solutions

USA . 10,000 parts In-Stock

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TANS Electronics

Latvia . 6,507 parts In-Stock

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Microchip USA

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Problanco Electronics

Mexico . 2,492 parts In-Stock

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SupplyDigital Components

Austria . 1,646 parts In-Stock

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Kulean Microsystems

USA . 1,084 parts In-Stock

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Corphita

USA . 822 parts In-Stock

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UHIMA Technologies

Türkiye . 476 parts In-Stock

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Corohmni

South Africa . 116 parts In-Stock

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Overview

Enhance your electronic projects with the NLV74VHC1G07DTT1G by Onsemi, a top-of-the-line logic gate designed for superior performance and reliability. Manufactured by industry leader Onsemi, this versatile component is perfect for a wide range of applications. With its high-quality construction and advanced technology, this logic gate offers unmatched value and benefits to customers. Upgrade your designs with the NLV74VHC1G07DTT1G and experience seamless operation and enhanced functionality like never before. Trust Onsemi for all your electronic component needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and resistance to environmental factors, making the product suitable for a variety of applications.

Surface Mount: YES

Enables easy and efficient installation on circuit boards, saving space and simplifying production processes.

Screening Level: AEC-Q100

Ensures high reliability and quality, meeting automotive industry standards for harsh operating conditions.

Nominal Supply Voltage: 3V

Optimal voltage for efficient performance and compatibility with various systems.

Propagation Delay: 14.5 ns

Provides fast signal processing and response times, enhancing the overall efficiency of the logic gates.

Output Characteristics: OPEN-DRAIN

Allows for flexible connection and integration with other components, enhancing versatility in circuit design.

Temperature Grade: MILITARY

Designed to withstand extreme temperatures and harsh environments, ensuring reliable operation in demanding applications.

Technology: CMOS

Utilizes low power consumption and high noise immunity, making the logic gates efficient and reliable in various electronic systems.

Technical Specifications

Logic Gates NLV74VHC1G07DTT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay (tpd):

14.5 ns

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.5 mm

Trade Compliance

NLV74VHC1G07DTT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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