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NLV74HC00ANG

Onsemi

NLV74HC00ANG by Onsemi

NLV74HC00ANG by Onsemi is a CMOS Logic Gates IC with 4 functions, 2 inputs, and 110 ns propagation delay. AEC-Q100 screening makes it suitable for military-grade applications requiring a supply voltage range of 2-6 V. With a temperature range of -55 to 125 °C, this through-hole package is ideal for robust electronic systems.

Median Price

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Lifecycle Status

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2

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< 1k

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Vyrian

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Digiode

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Problanco Electronics

Mexico . 8,183 parts In-Stock

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SupplyDigital Components

Austria . 5,432 parts In-Stock

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Kulean Microsystems

USA . 3,908 parts In-Stock

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TANS Electronics

Latvia . 3,488 parts In-Stock

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Corphita

USA . 1,480 parts In-Stock

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UHIMA Technologies

Türkiye . 864 parts In-Stock

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Corohmni

South Africa . 288 parts In-Stock

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Overview

Unleash the power of reliable logic gates with the NLV74HC00ANG by Onsemi. Crafted with precision and expertise, this innovative product offers unmatched quality and performance. Ideal for a wide range of applications, from industrial automation to consumer electronics, this logic gate is designed to meet your every need. With its durable construction and advanced technology, the NLV74HC00ANG ensures smooth operation and seamless integration. Trust Onsemi to deliver excellence, value, and efficiency with this top-of-the-line logic gate. Elevate your projects with the NLV74HC00ANG and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gates, ensuring long-term reliability.

No. of Functions: 4

Allows for multiple logic operations to be performed simultaneously, increasing the versatility and utility of the product.

Screening Level: AEC-Q100

Indicates that the product meets automotive industry standards for quality and reliability, making it suitable for automotive applications.

Nominal Supply Voltage / Vsup (V): 5

Operates at a standard voltage level, making it compatible with a wide range of systems and applications.

Propagation Delay (tpd): 110 ns

Provides a fast response time for logic operations, ensuring efficient performance in time-sensitive applications.

Maximum Operating Temperature: 125 °C

Withstands high temperatures, allowing for operation in challenging environments without compromising performance.

Technology: CMOS

Uses CMOS technology, which offers low power consumption and high noise immunity, making the logic gates energy efficient and reliable.

Technical Specifications

Logic Gates NLV74HC00ANG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Length:

18.86 mm

Logic IC Type:

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Propagation Delay (tpd):

110 ns

Screening Level:

AEC-Q100

Maximum Seated Height:

4.69 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

NLV74HC00ANG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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