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NLV74HC03ANG

Onsemi

NLV74HC03ANG by Onsemi

NLV74HC03ANG by Onsemi is a CMOS Logic Gates IC with 4 functions, 2 inputs, and 180 ns propagation delay. It operates b/w -55 to 125 °C and has AEC-Q100 screening for automotive applications. Package style is in-line with 14 terminals and open-drain output characteristics.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,341 parts In-Stock

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Digiode

USA . 1,814 parts In-Stock

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Problanco Electronics

Mexico . 7,259 parts In-Stock

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TANS Electronics

Latvia . 5,998 parts In-Stock

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SupplyDigital Components

Austria . 3,929 parts In-Stock

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Kulean Microsystems

USA . 3,862 parts In-Stock

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Corphita

USA . 656 parts In-Stock

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UHIMA Technologies

Türkiye . 331 parts In-Stock

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Corohmni

South Africa . 202 parts In-Stock

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Overview

Experience top-notch quality and reliability with the NLV74HC03ANG by Onsemi. As a leading manufacturer in the industry, Onsemi provides innovative solutions for logic gates that excel in performance and durability. Ideal for a wide range of applications, this product offers unmatched value and benefits to customers looking for a dependable solution. Trust in Onsemi's expertise and choose the NLV74HC03ANG for all your logic gate needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and resistance to environmental factors, making this logic gate suitable for a variety of applications.

No. of Functions: 4

Having four functions in one package allows for greater functionality and efficiency in circuit design.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V provides compatibility with a wide range of systems and power sources.

Propagation Delay (tpd): 180 ns

With a relatively low propagation delay, this logic gate can process signals quickly and efficiently.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this logic gate energy efficient and reliable in noisy environments.

Technical Specifications

Logic Gates NLV74HC03ANG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Length:

18.86 mm

Logic IC Type:

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Propagation Delay (tpd):

180 ns

Screening Level:

AEC-Q100

Maximum Seated Height:

4.69 mm

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

NLV74HC03ANG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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