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NLV74HC14ADR2G

Onsemi

NLV74HC14ADR2G by Onsemi

NLV74HC14ADR2G by Onsemi is a CMOS logic gate with 6 functions. It has a propagation delay of 22 ns at 5V, making it ideal for high-speed applications. With AEC-Q100 screening and operating temperature range from -55 to 125 °C, it's suitable for automotive electronics.

Median Price

$0.176

Lifecycle Status

Suppliers In-Stock

13

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1k+

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Arrow

USA . 26 parts In-Stock

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DigiKey

USA . 5,827 parts In-Stock

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$0.810

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$0.204

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Mouser Electronics

USA . 9,635 parts In-Stock

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Chip1Stop

Japan . 1,872 parts In-Stock

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Verical

USA . 1,872 parts In-Stock

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Digiode

USA . 960 parts In-Stock

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Cyclops Electronics Ltd

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Chip Stock

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ComSIT Distribution GmbH

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ComSIT USA

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Vyrian

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Bristol Electronics

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Nova Conductors

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Semicontronic

India . 3,964 parts In-Stock

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$0.093

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$0.091

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$0.090

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Corohmni

South Africa . 450 parts In-Stock

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Ampacity Inc.

Singapore . 4,010 parts In-Stock

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Corphita

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Vigor

Singapore . 587 parts In-Stock

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Aztec Data Supply Inc.

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Perfect Parts

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Eastek

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SupplyDigital Components

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Overview

Enhance your electronic designs with the NLV74HC14ADR2G by Onsemi, a top-quality logic gate that delivers superior performance and reliability. Manufactured by Onsemi, a trusted leader in semiconductor technology, this logic gate is ideal for a wide range of applications. With a fast propagation delay and low power consumption, this product offers exceptional value to customers looking for efficient and precise electronic components. Upgrade your projects with the NLV74HC14ADR2G and experience the benefits of high-quality manufacturing and cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material makes the package durable and resistant to external factors, ensuring the longevity of the product.

Propagation Delay At Nominal Supply: 22 ns

Low propagation delay ensures fast switching times, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Surface mount capability allows for easy integration onto PCBs, saving space and simplifying assembly processes.

No. of Functions: 6

Having multiple functions in a single device reduces the need for additional components and simplifies circuit design.

Screening Level: AEC-Q100

AEC-Q100 screening ensures the reliability and quality of the product, making it suitable for automotive applications.

Nominal Supply Voltage (Vsup): 5V

Operating at a standard 5V supply voltage makes integration into existing systems easier and more convenient.

Load Capacitance (CL): 50 pF

Low load capacitance helps in reducing power consumption and improving overall performance.

Power Supplies (V): 2/6

Versatility in power supply options allows for flexibility in different applications and voltage requirements.

No. of Terminals: 14

Having 14 terminals provides ample connectivity options and interfaces for diverse circuit configurations.

Maximum I (ol): 4 Amp

High output current capability allows for driving larger loads without external buffers or amplifiers.

Minimum Operating Temperature: -55 °C

Wide temperature range ensures operation in harsh environments and extreme conditions.

Peak Reflow Temperature: 260 C

High peak reflow temperature tolerance ensures durability during assembly processes and soldering.

Schmitt Trigger: YES

Inclusion of a Schmitt trigger allows for noise immunity and stable operation in noisy environments.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with various digital systems.

Technical Specifications

Logic Gates NLV74HC14ADR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

4 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Propagation Delay At Nominal Supply:

22 ns

Propagation Delay (tpd):

110 ns

Qualification:

Not Qualified

Schmitt Trigger:

YES

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

NLV74HC14ADR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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