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NLV74HCT04ADG

Onsemi

NLV74HCT04ADG by Onsemi

NLV74HCT04ADG by Onsemi is a 6-function logic gate with 26ns propagation delay. Operating b/w -55 to 125 °C, it has a supply voltage range of 4.5-5.5V making it ideal for military-grade applications requiring fast signal processing in compact spaces.

Median Price

$17.414

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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$17.414

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Vyrian

USA . 3,734 parts In-Stock

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Digiode

USA . 1,222 parts In-Stock

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Vigor

Singapore . 296 parts In-Stock

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$0.250

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AZTECH Wire

Italy . 1,151 parts In-Stock

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SupplyDigital Components

Austria . 8,068 parts In-Stock

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Problanco Electronics

Mexico . 6,716 parts In-Stock

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TANS Electronics

Latvia . 5,637 parts In-Stock

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Kulean Microsystems

USA . 3,360 parts In-Stock

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Corphita

USA . 1,476 parts In-Stock

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UHIMA Technologies

Türkiye . 892 parts In-Stock

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Microchip USA

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Corohmni

South Africa . 280 parts In-Stock

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Overview

Discover the superior quality and reliability of the NLV74HCT04ADG logic gates by Onsemi, a leading manufacturer in the industry. Ideal for a wide range of applications, these logic gates offer unmatched performance and efficiency. With a compact design and advanced technology, this product provides exceptional value to customers by delivering fast propagation delay and a wide operating temperature range. Trust Onsemi for cutting-edge solutions that meet your needs and exceed your expectations. Unlock new possibilities with the NLV74HCT04ADG today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY package body material ensures durability and reliability of the logic gates in various environmental conditions.

Surface Mount: YES

Surface mount capability allows for easier and more efficient PCB assembly, saving time and effort during the manufacturing process.

No. of Functions: 6

Having 6 functions in one device offers versatility and flexibility in designing complex logic circuits with fewer components.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V provides compatibility with common electronic systems and components.

Propagation Delay (tpd): 26 ns

Low propagation delay of 26 ns ensures fast response times and efficient signal processing in the logic gates.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125 °C, these logic gates can withstand high heat environments without degrading performance.

Minimum Operating Temperature: -55 °C

Operating at temperatures as low as -55 °C allows for reliable performance in cold environments or during temperature fluctuations.

Temperature Grade: MILITARY

Military-grade temperature rating ensures ruggedness and reliability in harsh operating conditions, making these logic gates suitable for demanding applications.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and faster switching speeds, making these logic gates energy-efficient and reliable.

Maximum Supply Voltage (Vsup): 5.5 V

With a maximum supply voltage of 5.5V, these logic gates have a safe operating range that prevents damage from voltage spikes or fluctuations.

Technical Specifications

Logic Gates NLV74HCT04ADG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HCT

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Propagation Delay (tpd):

26 ns

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

NLV74HCT04ADG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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