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NLV74HC08ADR2G

Onsemi

NLV74HC08ADR2G by Onsemi

NLV74HC08ADR2G by Onsemi is a CMOS Logic Gates IC with 4 functions, 2 inputs, and 55 ns propagation delay at 5V. It is AEC-Q100 screened for automotive applications, operates b/w -55 to 125 °C, and has a small outline package style.

Median Price

$0.102

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

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Avnet

USA . 50,000 parts In-Stock

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Rochester

USA . 1,237 parts In-Stock

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Flip Electronics

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Bristol Electronics

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Vigor

Singapore . 977 parts In-Stock

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AZTECH Wire

Italy . 585 parts In-Stock

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$14.540

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Component Stockers USA

USA . 741 parts In-Stock

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Perfect Parts

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QUARKTWIN TECHNOLOGY LTD

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Problanco Electronics

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Microchip USA

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Kulean Microsystems

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TANS Electronics

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UHIMA Technologies

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Overview

Unleash the power of innovation with the NLV74HC08ADR2G by Onsemi, a cutting-edge Logic Gates product that promises unparalleled quality and reliability. With a focus on precision engineering and advanced technology, Onsemi has positioned itself as a leader in the industry, offering products that are designed to exceed expectations. Ideal for a wide range of applications, this Logic Gates device delivers unmatched performance and efficiency, making it the perfect choice for customers looking for top-notch solutions. Experience the value and benefits of the NLV74HC08ADR2G and revolutionize your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protection for the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 55 ns

Low propagation delay ensures quick signal processing, making this product suitable for high-speed applications.

Surface Mount: YES

Surface mount capability makes it easy to integrate these logic gates onto printed circuit boards, saving space and simplifying assembly.

No. of Functions: 4

Having multiple functions in a single component can streamline circuit design and reduce the number of separate components needed.

Screening Level: AEC-Q100

AEC-Q100 screening ensures that the logic gates meet automotive industry standards for reliability and performance in harsh environments.

Nominal Supply Voltage / Vsup (V): 5

Operating at a commonly used supply voltage of 5V makes it compatible with a wide range of systems and applications.

No. of Inputs: 2

Having 2 inputs allows for basic logic operations to be performed, providing flexibility and versatility in circuit designs.

Package Shape: RECTANGULAR

Rectangular package shape ensures easy integration and alignment on the PCB, enhancing overall reliability and ease of use.

Temperature Grade: MILITARY

Military-grade temperature range ensures operation in harsh conditions, making this product suitable for industrial and defense applications.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gates energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates NLV74HC08ADR2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

HC/UH

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

5.2 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

2/6

Propagation Delay At Nominal Supply:

55 ns

Propagation Delay (tpd):

110 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

NLV74HC08ADR2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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