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NLV18VHC1G02DFT2G

Onsemi

NLV18VHC1G02DFT2G by Onsemi

NLV18VHC1G02DFT2G by Onsemi is a Logic Gate with 2 inputs, 13.5ns propagation delay at 3.3V supply voltage. It has a MILITARY temperature grade and AEC-Q100 screening level, suitable for automotive applications requiring fast signal processing in compact designs.

Median Price

$0.082

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 222,000 parts In-Stock

1+ parts

-

100+ parts

$0.085

1k+ parts

$0.070

10k+ parts

$0.063

222,000

-

$0.085

$0.070

$0.063

Verical

USA . 222,000 parts In-Stock

1+ parts

-

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-

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$0.078

222,000

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$0.078

Distributors (In-Stock)

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Digiode

USA . 2,276 parts In-Stock

1+ parts

$0.066

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2,276

$0.066

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Vyrian

USA . 5,644 parts In-Stock

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5,644

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Distributors (Availability)

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Corphita

USA . 50 parts In-Stock

1+ parts

$0.062

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-

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50

$0.062

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Corohmni

South Africa . 57 parts In-Stock

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$0.069

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57

$0.069

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Vigor

Singapore . 483 parts In-Stock

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$0.100

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483

$0.100

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AZTECH Wire

Italy . 934 parts In-Stock

1+ parts

$18.900

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934

$18.900

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Continental Prestige Electronics

USA . 222,000 parts In-Stock

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$0.083

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222,000

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$0.083

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Kulean Microsystems

USA . 5,232 parts In-Stock

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SupplyDigital Components

Austria . 4,036 parts In-Stock

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Problanco Electronics

Mexico . 3,130 parts In-Stock

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UHIMA Technologies

Türkiye . 258 parts In-Stock

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258

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Microchip USA

USA . 253 parts In-Stock

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253

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TANS Electronics

Latvia . 79 parts In-Stock

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Overview

Enhance your electronic projects with the NLV18VHC1G02DFT2G by Onsemi, a premium logic gate that guarantees top-notch performance and reliability. Onsemi's reputation for superior quality shines through in this product, which is ideal for a wide range of applications. Whether you're working on automotive electronics or industrial automation, this logic gate will deliver outstanding results. With fast propagation delay and a low load capacitance, you can trust that your circuits will operate efficiently. Elevate your projects with the NLV18VHC1G02DFT2G and experience the value and benefits it brings to your work.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material makes the product lightweight and durable, ideal for various applications.

Propagation Delay At Nominal Supply: 13.5 ns

The low propagation delay allows for fast operation, making this logic gate efficient in time-critical applications.

Surface Mount: YES

Being surface mountable makes installation easier and more convenient, saving space on the PCB.

Nominal Supply Voltage: 3.3V

Works efficiently at a common voltage level used in many electronic devices, ensuring compatibility.

Maximum Operating Temperature: 125 °C

The high operating temperature range makes this logic gate suitable for use in various environments and conditions.

Technical Specifications

Logic Gates NLV18VHC1G02DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

13.5 ns

Propagation Delay (tpd):

20.5 ns

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NLV18VHC1G02DFT2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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