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NLV14012BDG

Onsemi

NLV14012BDG by Onsemi

NLV14012BDG by Onsemi is a CMOS Logic Gates IC with 2 functions, 4 inputs, and 300 ns propagation delay at 5V. It operates in a temperature range of -55 to 125 °C and is AEC-Q100 compliant. Ideal for applications requiring fast signal processing in automotive electronics.

Median Price

$0.282

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

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Arrow

USA . 5 parts In-Stock

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$0.282

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$0.235

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$0.216

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Chip1Stop

Japan . 5 parts In-Stock

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Digiode

USA . 1,194 parts In-Stock

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$0.159

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Vyrian

USA . 7,077 parts In-Stock

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Connector Distribution Corp

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Right Parts Inc.

USA . 1,177 parts In-Stock

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Corphita

USA . 1,455 parts In-Stock

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$0.150

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Corohmni

South Africa . 439 parts In-Stock

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$0.167

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Component Stockers USA

USA . 3 parts In-Stock

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$0.190

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Vigor

Singapore . 176 parts In-Stock

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AZTECH Wire

Italy . 428 parts In-Stock

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Problanco Electronics

Mexico . 4,505 parts In-Stock

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Kulean Microsystems

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TANS Electronics

Latvia . 2,522 parts In-Stock

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SupplyDigital Components

Austria . 1,184 parts In-Stock

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UHIMA Technologies

Türkiye . 937 parts In-Stock

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Microchip USA

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Overview

Unlock the power of efficient logic gate operations with the Onsemi NLV14012BDG. Crafted by a trusted manufacturer known for quality and reliability, this versatile component is perfect for a wide range of applications. With its high-performance capabilities and ease of use, customers can enjoy seamless integration into their projects, saving time and boosting productivity. Experience the value and benefits of this top-notch product today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the product lightweight and durable, ideal for portable electronic devices.

Propagation Delay At Nominal Supply: 300 ns

A low propagation delay ensures fast signal processing, making this logic gate suitable for high-speed applications.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving time and effort during the manufacturing process.

No. of Functions: 2

Having multiple functions in one component reduces the need for additional components, saving space and cost in electronic designs.

Screening Level: AEC-Q100

AEC-Q100 screening ensures high reliability and quality, making this logic gate suitable for automotive applications where robustness is essential.

Nominal Supply Voltage / Vsup (V): 5

This logic gate operates at a commonly used voltage, making it compatible with a wide range of electronic systems.

Load Capacitance (CL): 50 pF

The low load capacitance allows for efficient signal transmission and reduces signal distortion, ensuring reliable performance.

Power Supplies (V): 5/15

Support for multiple power supplies provides flexibility in system design and compatibility with different voltage requirements.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this logic gate can withstand harsh environmental conditions, making it suitable for industrial applications.

Terminal Finish: MATTE TIN

Matte tin finish on terminals provides good solderability and corrosion resistance, ensuring reliable electrical connections.

Technical Specifications

Logic Gates NLV14012BDG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

4

No. of Terminals:

14

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

RAIL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

300 ns

Propagation Delay (tpd):

300 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Screening Level:

AEC-Q100

Maximum Seated Height:

1.75 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

18 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

NLV14012BDG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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