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NL27WZ07DFT2G

Onsemi

NL27WZ07DFT2G by Onsemi

NL27WZ07DFT2G by Onsemi is a Logic Gates IC with 4.8ns Propagation Delay, 2 Functions, and 50pF Load Capacitance. Ideal for applications requiring fast signal processing in military-grade environments. It features a small outline package with dual terminals and operates at temperatures ranging from -55 to 125°C.

Median Price

$0.028

Lifecycle Status

Suppliers In-Stock

24

In-Stock Inventory

1k+

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Farnell

UK . 3 parts In-Stock

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$0.083

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Mouser Electronics

USA . 20,720 parts In-Stock

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$0.031

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$0.027

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$0.038

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$0.027

Element14

Singapore . 3 parts In-Stock

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$0.146

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$0.054

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$0.050

DigiKey

USA . 44,473 parts In-Stock

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Arrow

USA . 42,000 parts In-Stock

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Verical

USA . 42,000 parts In-Stock

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Chip1Stop

Japan . 9,500 parts In-Stock

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EBV Elektronik

Germany . 9,000 parts In-Stock

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Digiode

USA . 1,167 parts In-Stock

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Nova Conductors

Japan . 900 parts In-Stock

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Chip Stock

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Vyrian

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Flip Electronics

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NAC Semi

USA . 15,000 parts In-Stock

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IBS Electronics

USA . 12,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 7,888 parts In-Stock

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ComSIT Distribution GmbH

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Dan-Mar Components

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Diverse Electronics

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Bristol Electronics

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EPE Components Inc.

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Univa Technologies Pte. Ltd

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QIE Inc.

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PC Components Company LLC

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Semicontronic

India . 17,687 parts In-Stock

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Ampacity Inc.

Singapore . 16,372 parts In-Stock

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Corphita

USA . 1,039 parts In-Stock

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Corohmni

South Africa . 280 parts In-Stock

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Advanced Electronics

New Zealand . 350 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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Vigor

Singapore . 485 parts In-Stock

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Aztec Data Supply Inc.

USA . 117 parts In-Stock

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Perfect Parts

USA . 1,132,466 parts In-Stock

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Component Stockers USA

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Futuretech Components

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Lixinc

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SupplyDigital Components

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Argo Parts USA

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Continental Prestige Electronics

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GreenTree Electronics

Israel . 2,500 parts In-Stock

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Alle Elektronik GmbH

Germany . 2,133 parts In-Stock

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Legend Electronics Inc. (Excess)

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UHIMA Technologies

Türkiye . 701 parts In-Stock

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Microchip USA

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Univa Technologies Pte. Ltd (Excess)

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Overview

Experience the superior quality and reliability of the NL27WZ07DFT2G by Onsemi, a leading manufacturer in the industry. As a high-performance Logic Gate, this product offers fast propagation delay, excellent surface mount capabilities, and a wide range of applications. With a compact design and low power consumption, customers can expect efficient operation and seamless integration into their projects. Trust Onsemi to deliver top-notch products that provide value, benefits, and advantages to meet your needs. Boost your designs with the NL27WZ07DFT2G and experience unparalleled performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making the product long-lasting and reliable.

Propagation Delay At Nominal Supply: 4.8 ns

Low propagation delay ensures fast signal processing, making the product suitable for high-speed applications.

Surface Mount: YES

The surface mount feature makes installation and assembly easier, saving time and effort.

Nominal Supply Voltage / Vsup (V): 2.3

Operating at a low supply voltage helps in reducing power consumption and heat generation.

Output Characteristics: OPEN-DRAIN

Open-drain output allows for easy interfacing with other devices, increasing versatility.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, improving overall performance.

Technical Specifications

Logic Gates NL27WZ07DFT2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

27WZ

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.1 mA

Propagation Delay At Nominal Supply:

4.8 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.25 mm

Trade Compliance

NL27WZ07DFT2G Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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