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NL27WZ06MU3TCG

Onsemi

NL27WZ06MU3TCG by Onsemi

NL27WZ06MU3TCG by Onsemi is a Logic Gates IC with 2 functions, 5V supply voltage, and 9.5ns propagation delay. It operates b/w -55°C to 125°C and has open-drain output characteristics. Ideal for applications requiring fast signal processing in temperature-sensitive environments.

Median Price

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Lifecycle Status

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3

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1k+

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Vyrian

USA . 4,202 parts In-Stock

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Digiode

USA . 927 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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AZTECH Wire

Italy . 775 parts In-Stock

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$13.874

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Ampacity Inc.

Singapore . 390 parts In-Stock

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$43.000

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Kulean Microsystems

USA . 7,671 parts In-Stock

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TANS Electronics

Latvia . 4,653 parts In-Stock

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Problanco Electronics

Mexico . 4,042 parts In-Stock

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Corphita

USA . 2,445 parts In-Stock

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Aranea Global

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SupplyDigital Components

Austria . 1,932 parts In-Stock

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Microchip USA

USA . 1,230 parts In-Stock

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Corohmni

South Africa . 336 parts In-Stock

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UHIMA Technologies

Türkiye . 16 parts In-Stock

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Overview

Unlock endless possibilities with the NL27WZ06MU3TCG by Onsemi, a high-quality logic gate that offers unmatched performance and reliability. Manufactured by Onsemi, a leader in semiconductor technology, this logic gate is perfect for a wide range of applications. Whether you're looking to enhance the efficiency of your electronic devices or streamline your projects, this product delivers exceptional value, benefits, and advantages that will exceed your expectations. Trust Onsemi to provide you with cutting-edge solutions that push the boundaries of innovation.

Feature Benefit Bullets

No. of Functions: 2

Having multiple functions in a single component allows for efficient use of board space and simplifies circuit design.

Nominal Supply Voltage / Vsup (V): 5

Operating at a standard supply voltage of 5V makes it compatible with common logic circuits and power sources.

Load Capacitance (CL) 50 pF

With a low load capacitance, this product can drive capacitive loads efficiently without significant signal degradation.

Propagation Delay (tpd) 9.5 ns

A fast propagation delay ensures quick response time, making this product suitable for high-speed applications.

Maximum Operating Temperature: 125 °C

Being able to operate at high temperatures allows for use in a variety of environments and applications.

Output Characteristics: OPEN-DRAIN

An open-drain output allows for easy interfacing with other components and provides flexibility in circuit design.

Minimum Operating Temperature: -55 °C

The wide temperature range from -55°C to 125°C ensures reliable performance in harsh conditions or industrial settings.

Minimum Supply Voltage (Vsup): 1.65 V

The low minimum supply voltage enables operation in low-power and battery-operated devices.

Maximum Supply Voltage (Vsup): 5.5 V

With a maximum supply voltage of 5.5V, this product is protected against overvoltage conditions, increasing its robustness.

Technical Specifications

Logic Gates NL27WZ06MU3TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

Load Capacitance (CL):

50 pF

Logic IC Type:

No. of Functions:

2

No. of Inputs:

1

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Peak Reflow Temperature (C):

NOT SPECIFIED

Propagation Delay (tpd):

9.5 ns

Schmitt Trigger:

NO

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

5

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Trade Compliance

NL27WZ06MU3TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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