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NL27WZ00USG-F22190

Onsemi

NL27WZ00USG-F22190 by Onsemi

NL27WZ00USG-F22190 by Onsemi is a Logic Gates IC with 2 functions and inputs. It operates at 2.3V, has 11ns propagation delay, and can handle up to 32A current. Ideal for applications requiring fast response time and low power consumption in a compact design.

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Avnet

USA . 33,000 parts In-Stock

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Arrow

USA . 3,000 parts In-Stock

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$0.090

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$0.090

Verical

USA . 3,000 parts In-Stock

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$0.090

3,000

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$0.090

Distributors (In-Stock)

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NAC Semi

USA . 6,000 parts In-Stock

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$0.133

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$0.133

Vyrian

USA . 5,997 parts In-Stock

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5,997

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Digiode

USA . 275 parts In-Stock

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275

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Distributors (Availability)

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Corohmni

South Africa . 190 parts In-Stock

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$0.090

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190

$0.090

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Component Stockers USA

USA . 8,224 parts In-Stock

1+ parts

$0.360

100+ parts

$0.130

1k+ parts

$0.100

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8,224

$0.360

$0.130

$0.100

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AZTECH Wire

Italy . 75 parts In-Stock

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$8.320

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75

$8.320

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GreenTree Electronics

Israel . 27,000 parts In-Stock

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27,000

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Authorized Procurement Solutions

USA . 12,000 parts In-Stock

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SupplyDigital Components

Austria . 8,297 parts In-Stock

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Microchip USA

USA . 6,623 parts In-Stock

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6,623

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Kulean Microsystems

USA . 5,724 parts In-Stock

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Problanco Electronics

Mexico . 4,950 parts In-Stock

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Glotronic Ltd.

UK . 2,400 parts In-Stock

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Corphita

USA . 1,221 parts In-Stock

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UHIMA Technologies

Türkiye . 985 parts In-Stock

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985

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TANS Electronics

Latvia . 362 parts In-Stock

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362

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Overview

Experience the superior quality of Onsemi with the NL27WZ00USG-F22190 Logic Gates. This versatile component offers a multitude of applications, providing customers with exceptional value and benefits. Whether you're looking to enhance your electronic projects or streamline your circuit designs, this product's reliable performance and efficient operation make it a must-have for any tech enthusiast. Trust in Onsemi's legacy of excellence and choose the NL27WZ00USG-F22190 for all your logic gate needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the logic gates.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and making the product suitable for compact designs.

No. of Functions: 2

Having two functions in a single unit increases efficiency and functionality of the logic gates.

No. of Inputs: 2

With 2 inputs, the logic gates can process more complex logic operations, making them versatile for various applications.

Nominal Supply Voltage / Vsup (V): 2.3

Operating at a nominal supply voltage of 2.3V provides energy efficiency and compatibility with a wide range of devices.

Propagation Delay (tpd): 11 ns

Low propagation delay ensures fast response times and efficient processing of signals within the logic gates.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the logic gates reliable and efficient.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, the logic gates can withstand harsh environments and extended use without degradation.

Technical Specifications

Logic Gates NL27WZ00USG-F22190 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

27WZ

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

2.3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

2

No. of Inputs:

2

No. of Terminals:

8

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay (tpd):

11 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.9 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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