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NL17SZ08MU3TCG

Onsemi

NL17SZ08MU3TCG by Onsemi

NL17SZ08MU3TCG by Onsemi is a Logic Gate with 2 inputs, 12.7 ns propagation delay, and 32 Amp max I (ol). It operates in temperatures ranging from -55 to 125 °C and has a supply voltage of 1.65-5.5 V. Ideal for military-grade applications requiring fast signal processing in compact spaces.

Median Price

$0.221

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 215,055 parts In-Stock

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-

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$0.230

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$0.191

10k+ parts

$0.170

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-

$0.230

$0.191

$0.170

Verical

USA . 215,055 parts In-Stock

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$0.212

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$0.212

Distributors (In-Stock)

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Digiode

USA . 1,129 parts In-Stock

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$0.091

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1,129

$0.091

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Vyrian

USA . 8,529 parts In-Stock

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8,529

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Flip Electronics

USA . 3,000 parts In-Stock

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Corphita

USA . 984 parts In-Stock

1+ parts

$0.086

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984

$0.086

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Corohmni

South Africa . 339 parts In-Stock

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$0.096

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339

$0.096

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AZTECH Wire

Italy . 1,077 parts In-Stock

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$13.030

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$13.030

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TANS Electronics

Latvia . 8,282 parts In-Stock

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SupplyDigital Components

Austria . 6,886 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 4,024 parts In-Stock

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Problanco Electronics

Mexico . 3,852 parts In-Stock

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Kulean Microsystems

USA . 1,316 parts In-Stock

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UHIMA Technologies

Türkiye . 893 parts In-Stock

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Microchip USA

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Vigor

Singapore . 176 parts In-Stock

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Overview

Unlock the power of precision with the NL17SZ08MU3TCG by Onsemi, a cutting-edge logic gate designed to enhance performance and efficiency in a variety of applications. Manufactured by Onsemi, known for their superior quality and innovation, this small outline, very thin profile package offers customers unparalleled reliability and functionality. Ideal for military-grade technology, this logic gate is the perfect solution for those seeking high-speed data processing with minimal power consumption. Upgrade your electronics with the NL17SZ08MU3TCG and experience the difference today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the package more durable and resistant to environmental factors, ensuring longevity and stability.

Surface Mount: YES

Allows for easy and efficient installation on circuit boards, saving time and effort during assembly.

Nominal Supply Voltage / Vsup (V): 2.3

Operates at a moderate supply voltage, making it suitable for a wide range of applications without risking voltage overload.

Propagation Delay (tpd): 12.7 ns

Fast propagation delay ensures quick response time, ideal for high-speed logic operations.

Maximum Operating Temperature: 125 °C

Capable of operating at high temperatures, making it suitable for industrial or extreme environments.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product efficient and reliable.

Technical Specifications

Logic Gates NL17SZ08MU3TCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

S-PDSO-N6

Length:

1 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

32 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,14

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

100 mA

Propagation Delay (tpd):

12.7 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL GOLD PALLADIUM

Terminal Form:

Terminal Pitch:

.35 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

NL17SZ08MU3TCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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