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NL17SZ06XV5T2G

Onsemi

NL17SZ06XV5T2G by Onsemi

NL17SZ06XV5T2G by Onsemi is a CMOS Logic Gate with 6ns Propagation Delay, 3.3V Power Supply, and 50pF Load Capacitance. Ideal for industrial applications requiring fast signal processing in compact designs due to its small outline package and low power consumption.

Median Price

$0.300

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,920 parts In-Stock

1+ parts

$0.300

100+ parts

$0.114

1k+ parts

$0.062

10k+ parts

$0.034

3,920

$0.300

$0.114

$0.062

$0.034

Distributors (In-Stock)

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Flip Electronics

USA . 88,000 parts In-Stock

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Bristol Electronics

USA . 10,960 parts In-Stock

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$0.352

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$0.263

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$0.244

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$0.352

$0.263

$0.244

Microfarads

USA . 10,357 parts In-Stock

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Vyrian

USA . 7,343 parts In-Stock

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Digiode

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Component Stockers USA

USA . 114,835 parts In-Stock

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$1.140

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AZTECH Wire

Italy . 418 parts In-Stock

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$14.940

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418

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Perfect Parts

USA . 56,654 parts In-Stock

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TANS Electronics

Latvia . 8,375 parts In-Stock

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Authorized Procurement Solutions

USA . 6,676 parts In-Stock

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GreenTree Electronics

Israel . 6,676 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,143 parts In-Stock

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Kepictronics

USA . 6,000 parts In-Stock

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Assy Fe

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Kulean Microsystems

USA . 2,436 parts In-Stock

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Corphita

USA . 1,529 parts In-Stock

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Problanco Electronics

Mexico . 1,438 parts In-Stock

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SupplyDigital Components

Austria . 855 parts In-Stock

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UHIMA Technologies

Türkiye . 718 parts In-Stock

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Vigor

Singapore . 575 parts In-Stock

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Corohmni

South Africa . 359 parts In-Stock

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Microchip USA

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Overview

Enhance the efficiency and performance of your electronic designs with the NL17SZ06XV5T2G by Onsemi. As a leading manufacturer in logic gates, Onsemi ensures top-notch quality and reliability in their products. This versatile component is ideal for various applications, offering fast propagation delay and low power consumption. Experience seamless integration and improved functionality with the NL17SZ06XV5T2G, providing unmatched value and benefits for your projects. Trust Onsemi to deliver cutting-edge solutions for your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and reliability for the product, making it suitable for various applications.

Propagation Delay At Nominal Supply: 6 ns

Low propagation delay ensures fast operation and efficient performance of the logic gates.

Surface Mount: YES

Surface mount capability enables easy installation and integration into circuit boards, saving space and reducing assembly time.

Nominal Supply Voltage / Vsup (V): 2.3

Optimal supply voltage ensures stable and consistent operation of the logic gates within the specified range.

Load Capacitance (CL): 50 pF

Suitable load capacitance for the logic gates ensures proper functioning and compatibility with different components in the circuit.

Power Supplies (V): 3.3

Compatible power supply voltage for the logic gates, ensuring reliable performance without exceeding the specified limits.

No. of Terminals: 5

5 terminals provide necessary connections for input, output, and power supply, offering flexibility in circuit design and application.

Maximum Seated Height: 0.6 mm

Low seated height allows for compact and space-efficient design, ideal for applications with limited vertical space.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and fast switching speeds, enhancing the efficiency and reliability of the logic gates.

Technical Specifications

Logic Gates NL17SZ06XV5T2G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

17SZ

JESD-30 Code:

R-PDSO-F5

JESD-609 Code:

e3

Length:

1.6 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

FL5/6,.047,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

6 ns

Propagation Delay (tpd):

12 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

.6 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

2.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.2 mm

Trade Compliance

NL17SZ06XV5T2G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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