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NL17SZ05DBVT1G

Onsemi

NL17SZ05DBVT1G by Onsemi

NL17SZ05DBVT1G by Onsemi is a CMOS Logic Gate with 3.7ns Propagation Delay, 50pF Load Capacitance, and 24A Max I (ol). Ideal for military applications due to its MILITARY Temperature Grade and OPEN-DRAIN Output Characteristics. It comes in a SMALL OUTLINE, THIN PROFILE package with DUAL Terminal Position.

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Digiode

USA . 547 parts In-Stock

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AZTECH Wire

Italy . 559 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 16,158 parts In-Stock

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SupplyDigital Components

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 682 parts In-Stock

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Corphita

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Overview

Experience the seamless performance and reliability of the NL17SZ05DBVT1G by Onsemi, a top-tier manufacturer known for producing high-quality logic gates. Ideal for a wide range of applications, this product offers a fast propagation delay of 3.7 ns and operates at a nominal supply voltage of 3.3V, providing unparalleled efficiency and precision. With a durable plastic/epoxy package body material and compact design, the NL17SZ05DBVT1G ensures optimal functionality in any setting. Upgrade your projects with this innovative solution that guarantees superior output characteristics and maximum operating temperature of 125 °C, making it a valuable addition to your toolkit. Unlock the potential of your designs with the NL17SZ05DBVT1G – the ultimate choice for seamless performance.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and provides protection to the components inside, ensuring a longer lifespan for the product.

Propagation Delay At Nominal Supply: 3.7 ns

Low propagation delay means faster response times, making this product ideal for high-speed applications.

Surface Mount: YES

Surface mount technology allows for easy and secure installation on circuit boards, saving space and improving overall reliability.

Nominal Supply Voltage / Vsup (V): 3.3

This voltage level is commonly used in many electronic systems, ensuring compatibility with existing setups.

Load Capacitance (CL): 50 pF

Suitable for driving a range of loads while maintaining signal integrity, making it versatile for various applications.

No. of Terminals: 5

A sufficient number of terminals for connecting to other components, providing flexibility in circuit design.

Package Style (Meter): SMALL OUTLINE, THIN PROFILE

Compact size allows for efficient use of space on the circuit board, making it suitable for compact electronic devices.

Maximum I (ol): 24 Amp

High output current capability, making it suitable for driving power-hungry loads without additional amplification.

Propagation Delay (tpd): 12 ns

Fast propagation delay ensures quick signal processing, essential for applications requiring real-time response.

Maximum Operating Temperature: 125 °C

Wide operating temperature range ensures reliable performance in various environmental conditions.

Output Characteristics: OPEN-DRAIN

Open-drain output allows for flexible interfacing with other components, increasing compatibility in different circuit configurations.

Minimum Operating Temperature: -55 °C

Can function in extreme cold temperatures, suitable for applications in harsh environments.

Terminal Finish: MATTE TIN

Matte tin finish provides good solderability and corrosion resistance, ensuring reliable connections for a longer period.

Peak Reflow Temperature °C: 260

Can withstand high reflow temperatures, making it suitable for automated assembly processes.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in noisy environments.

Terminal Form: GULL WING

Gull-wing terminals provide mechanical strength and ease of soldering, ensuring secure connections on the circuit board.

Terminal Pitch: 0.95 mm

Optimal terminal pitch for easy PCB layout and compact design, improving overall efficiency in circuit design.

Maximum Supply Voltage (Vsup): 5.5 V

Wide supply voltage range allows for compatibility with different power sources, enhancing versatility in system integration.

Maximum Power Supply Current (ICC): 0.01 mA

Low power consumption minimizes energy usage and heat dissipation, making it ideal for battery-operated devices or energy-efficient systems.

Technical Specifications

Logic Gates NL17SZ05DBVT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.01 mA

Propagation Delay At Nominal Supply:

3.7 ns

Propagation Delay (tpd):

12 ns

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1.5 mm

Trade Compliance

NL17SZ05DBVT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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