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NL17SG34AMUTCG

Onsemi

NL17SG34AMUTCG by Onsemi

NL17SG34AMUTCG by Onsemi is a CMOS Logic Gate with 4.8ns Propagation Delay, 3V Nominal Voltage, and 30pF Load Capacitance. Ideal for military applications due to its MILITARY Temperature Grade, this surface-mount device has a small outline package style and operates b/w -55 °C to 125°C.

Median Price

$0.140

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 129,000 parts In-Stock

1+ parts

-

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$0.145

1k+ parts

$0.121

10k+ parts

$0.107

129,000

-

$0.145

$0.121

$0.107

Verical

USA . 129,000 parts In-Stock

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$0.134

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$0.134

Distributors (In-Stock)

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Digiode

USA . 1,998 parts In-Stock

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$0.113

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1,998

$0.113

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Vyrian

USA . 8,083 parts In-Stock

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8,083

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Distributors (Availability)

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Corphita

USA . 688 parts In-Stock

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$0.107

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688

$0.107

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Corohmni

South Africa . 477 parts In-Stock

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$0.119

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477

$0.119

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AZTECH Wire

Italy . 631 parts In-Stock

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$10.320

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631

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QUARKTWIN TECHNOLOGY LTD

USA . 10,339 parts In-Stock

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Kulean Microsystems

USA . 7,908 parts In-Stock

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SupplyDigital Components

Austria . 7,902 parts In-Stock

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Problanco Electronics

Mexico . 5,672 parts In-Stock

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TANS Electronics

Latvia . 3,054 parts In-Stock

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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UHIMA Technologies

Türkiye . 467 parts In-Stock

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Microchip USA

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Overview

Discover the cutting-edge NL17SG34AMUTCG by Onsemi, a top-quality Logic Gates product designed to elevate your electronics projects. With a focus on innovation and reliability, Onsemi delivers exceptional performance and durability in every component. Ideal for a wide range of applications, this Logic Gate offers fast propagation delay, low power consumption, and a compact package shape for seamless integration. Experience the value and benefits of Onsemi's NL17SG34AMUTCG, where quality meets precision to exceed your expectations. Elevate your projects with the best in Logic Gates technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material provides durability and flexibility, making the product resistant to external impacts and suitable for a wide range of applications.

Propagation Delay At Nominal Supply: 4.8 ns

Low propagation delay ensures fast signal processing, making the product ideal for high-speed applications.

Surface Mount: YES

Surface mount capability makes installation and assembly easier, saving time and effort during production.

Nominal Supply Voltage / Vsup (V): 3

Operates at a standard voltage level, compatible with most electronic systems and power supplies.

Load Capacitance (CL): 30 pF

Low load capacitance minimizes signal distortion and interference, ensuring reliable performance in complex circuits.

No. of Terminals: 6

Sufficient number of terminals for easy connectivity and integration into circuit designs.

Maximum I (ol): 8 Amp

High output current capability allows the product to drive multiple components without risk of damage.

Maximum Operating Temperature: 125 °C

Wide operating temperature range enables the product to function reliably in extreme environmental conditions.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

High-quality terminal finish ensures good electrical conductivity and resistance to corrosion, extending the product's lifespan.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making the product energy-efficient and reliable in noisy environments.

Technical Specifications

Logic Gates NL17SG34AMUTCG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

17SG

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e4

Length:

1.45 mm

Load Capacitance (CL):

30 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

6

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC6,.04,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, VERY THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

20 mA

Propagation Delay At Nominal Supply:

4.8 ns

Propagation Delay (tpd):

22.4 ns

Schmitt Trigger:

NO

Maximum Seated Height:

.55 mm

Maximum Supply Voltage (Vsup):

3.6 V

Minimum Supply Voltage (Vsup):

.9 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

1 mm

Trade Compliance

NL17SG34AMUTCG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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