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NCP3418ADR2

Onsemi

NCP3418ADR2 by Onsemi

NCP3418ADR2 by Onsemi is a MOSFET Gate Driver with 12V power supply, 13.2V max supply voltage, and 0.06us turn-on/off time. Ideal for half-bridge based applications in commercial extended temperature environments due to its small outline package and high side driver capability.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 1,754 parts In-Stock

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Vyrian

USA . 585 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 26,466 parts In-Stock

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TANS Electronics

Latvia . 4,657 parts In-Stock

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Microchip USA

USA . 4,144 parts In-Stock

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Problanco Electronics

Mexico . 3,199 parts In-Stock

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Kulean Microsystems

USA . 2,600 parts In-Stock

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SupplyDigital Components

Austria . 828 parts In-Stock

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Corphita

USA . 729 parts In-Stock

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UHIMA Technologies

Türkiye . 327 parts In-Stock

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Corohmni

South Africa . 240 parts In-Stock

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Vigor

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Kepictronics

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Overview

Enhance your electronics projects with the NCP3418ADR2 by Onsemi, a high-quality MOSFET gate driver that offers reliable performance and precise control. Manufactured by Onsemi, a trusted name in the industry, this product is perfect for a wide range of applications. From power supplies to motor control, this small outline package is versatile and efficient. With a nominal supply voltage of 12V and fast turn-on and turn-off times, the NCP3418ADR2 provides excellent value and benefits to customers looking for top-notch performance in their designs. Trust Onsemi for all your MOSFET gate driver needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ensuring long-lasting performance.

Surface Mount: YES

Being surface mountable, this product is easy to install and saves space on the PCB.

Maximum Supply Voltage: 13.2 V

With a high maximum supply voltage, this MOSFET gate driver can handle a wide range of power supply inputs.

Package Shape: RECTANGULAR

The rectangular package shape allows for efficient placement on the PCB and easy integration into the overall design.

Power Supplies (V): 12

This MOSFET gate driver operates at a standard 12V power supply, making it compatible with a wide range of applications.

Terminal Position: DUAL

Having dual terminal positions provides flexibility in connection options, ensuring compatibility with various circuit layouts.

Maximum Seated Height: 1.75 mm

The low seated height makes this gate driver suitable for compact designs where space is limited.

High Side Driver: YES

The presence of a high side driver allows for efficient control of power stages in high-side applications, enhancing performance.

Turn-on Time: 0.06 us

The fast turn-on time ensures quick and precise switching of the MOSFETs, improving overall circuit efficiency.

Turn-off Time: 0.06 us

The fast turn-off time helps in rapid switching of the MOSFETs, reducing heat dissipation and improving power efficiency.

Technical Specifications

MOSFET Gate Drivers NCP3418ADR2 attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e0

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

13.2 V

Minimum Supply Voltage:

4.6 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.06 us

Turn-on Time:

.06 us

Width:

3.9 mm

Trade Compliance

NCP3418ADR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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