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NCP303161MNTWG

Onsemi

NCP303161MNTWG by Onsemi

NCP303161MNTWG by Onsemi is a MOSFET Gate Driver with 5.5V max supply voltage, 80A peak current limit, and -40 to 125 °C operating temperature range. Ideal for automotive applications requiring high side drivers in compact chip carrier package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,538 parts In-Stock

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Digiode

USA . 319 parts In-Stock

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319

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Kulean Microsystems

USA . 8,380 parts In-Stock

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TANS Electronics

Latvia . 6,122 parts In-Stock

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Problanco Electronics

Mexico . 4,187 parts In-Stock

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SupplyDigital Components

Austria . 3,149 parts In-Stock

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Corphita

USA . 1,771 parts In-Stock

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UHIMA Technologies

Türkiye . 755 parts In-Stock

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Corohmni

South Africa . 164 parts In-Stock

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Overview

Enhance your electronic designs with the NCP303161MNTWG by Onsemi! This high-quality MOSFET Gate Driver boasts a wide operating temperature range, making it perfect for automotive applications. With a maximum supply voltage of 16V and a nominal output peak current limit of 80A, this chip carrier offers exceptional performance and reliability. Trust Onsemi's expertise in semiconductor manufacturing to deliver cutting-edge technology that meets your needs. Upgrade your projects today with the NCP303161MNTWG and experience the benefits it brings to your designs!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and protection for the internal components, ensuring reliability and durability.

Surface Mount: YES

Surface mount design allows for easy and convenient installation on circuit boards, saving space and reducing assembly time.

Maximum Supply Voltage: 5.5 V

Higher maximum supply voltage allows for compatibility with a wide range of systems, offering flexibility in design and application.

Package Shape: RECTANGULAR

Rectangular shape provides a compact and efficient form factor, making it easy to integrate into different electronic devices.

No. of Terminals: 39

Large number of terminals allow for versatile connectivity options, enabling the driver to be easily integrated into complex circuits.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance in harsh environments, making it suitable for automotive applications.

Nominal Output Peak Current Limit: 80 A

High peak current limit allows for driving power-hungry MOSFETs, enabling the driver to control high-current loads effectively.

Technical Specifications

MOSFET Gate Drivers NCP303161MNTWG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

R-PBCC-N41

Length:

6 mm

No. of Functions:

1

No. of Terminals:

39

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

80 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

BCC

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Maximum Seated Height:

.8 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

16 V

Minimum Supply Voltage-1:

4.5 V

Nominal Supply Voltage-1:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.45 mm

Terminal Position:

BOTTOM

Width:

5 mm

Trade Compliance

NCP303161MNTWG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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