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NCP302260MNTWG

Onsemi

NCP302260MNTWG by Onsemi

NCP302260MNTWG by Onsemi is a MOSFET Gate Driver with 33 terminals, operating voltage range of 4.5-5.5V, and high side driver feature. Ideal for automotive applications due to its very thin profile, quick turn-on time of 0.035 us, and high output peak current limit of 85A.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

< 1k

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Digiode

USA . 580 parts In-Stock

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Vyrian

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SupplyDigital Components

Austria . 7,803 parts In-Stock

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Problanco Electronics

Mexico . 5,114 parts In-Stock

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TANS Electronics

Latvia . 4,754 parts In-Stock

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Kulean Microsystems

USA . 4,210 parts In-Stock

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UHIMA Technologies

Türkiye . 977 parts In-Stock

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Corphita

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Corohmni

South Africa . 210 parts In-Stock

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Overview

Enhance your electronic designs with the NCP302260MNTWG MOSFET Gate Driver from Onsemi. Known for their top-notch quality and reliability, Onsemi delivers cutting-edge solutions for various applications. This surface-mountable driver offers a wide supply voltage range, automotive-grade temperature tolerance, and high output peak current limit, ensuring optimal performance in demanding environments. Experience seamless operation and improved efficiency with the NCP302260MNTWG, a game-changer in the world of MOSFET gate drivers.

Feature Benefit Bullets

Surface Mount: YES

Surface mount allows for easier and more efficient installation and soldering on circuit boards, saving time and labor costs.

Maximum Supply Voltage: 5.5 V

Supports a high maximum supply voltage, making it suitable for a wide range of applications and ensuring compatibility with various power sources.

Package Shape: SQUARE

Square package shape provides compact and efficient design integration in tight spaces, maximizing board real estate usage.

No. of Terminals: 33

33 terminals offer versatility in connectivity options, allowing for complex circuit configurations and customization.

Package Style (Meter): CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

The combination of chip carrier, heat sink/slug, and very thin profile packages enhances thermal dissipation, improves reliability, and reduces overall product size.

Minimum Supply Voltage: 4.5 V

Supports operation at a low minimum supply voltage, enabling energy-efficient performance and broadening the range of compatible power sources.

Maximum Operating Temperature: 125 °C

High maximum operating temperature ensures reliable performance in harsh environments and under elevated temperature conditions.

Minimum Operating Temperature: -40 °C

Low minimum operating temperature allows for operation in cold environments, making it suitable for automotive and industrial applications.

Terminal Position: QUAD

Quad terminal position facilitates easy and organized connection to other components, simplifying installation and troubleshooting.

Maximum Seated Height: 0.8 mm

Low maximum seated height enables a compact and slim profile, ideal for space-constrained applications and designs.

Width: 5 mm

The 5mm width offers a balance between compactness and ease of handling during assembly and installation.

High Side Driver: YES

High-side driver capability allows for controlling power switches on the high side of the load, offering flexibility in circuit design and applications.

Length: 5 mm

Balanced length of 5mm contributes to a compact form factor while providing sufficient space for routing and connectivity.

Temperature Grade: AUTOMOTIVE

Automotive temperature grade ensures reliability and performance in automotive environments, meeting stringent industry standards and requirements.

Terminal Form: NO LEAD

No lead terminal form eliminates the risk of lead-related issues and provides a more environmentally friendly and lead-free option.

Maximum Supply Current: 2 mA

Low maximum supply current consumption helps in reducing power consumption and heat dissipation, enhancing overall energy efficiency.

Nominal Supply Voltage: 5 V

Nominal supply voltage of 5V ensures compatibility and standardization with common power sources and control systems.

Turn-on Time: 0.035 us

Fast turn-on time of 0.035 microseconds ensures quick response and operation, suitable for high-speed switching and control applications.

Nominal Output Peak Current Limit: 85 A

Nominal output peak current limit of 85A allows for handling high-current loads, providing robust performance in demanding applications.

Interface IC Type: BUFFER OR INVERTER BASED MOSFET DRIVER

Interface IC type offers flexibility in driving and controlling MOSFETs, catering to different signal requirements and driving scenarios.

Turn-off Time: 0.052 us

Short turn-off time of 0.052 microseconds enhances efficiency in switching off the MOSFETs, reducing power losses and enhancing overall performance.

Technical Specifications

MOSFET Gate Drivers NCP302260MNTWG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

S-XQCC-N33

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

33

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

85 A

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Maximum Seated Height:

.8 mm

Maximum Supply Current:

2 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Position:

QUAD

Turn-off Time:

.052 us

Turn-on Time:

.035 us

Width:

5 mm

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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