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NCP3418ADR2G

Onsemi

NCP3418ADR2G by Onsemi

NCP3418ADR2G by Onsemi is a MOSFET gate driver with 12V power supply, 13.2V max supply voltage, and 0.06us turn-on/off time. Ideal for high side driver applications in commercial extended temperature environments. Package style: small outline, surface mountable with dual terminals and Gull Wing finish.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

< 1k

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Digiode

USA . 206 parts In-Stock

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Distributors (Availability)

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Component Stockers USA

USA . 787 parts In-Stock

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$99.990

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QUARKTWIN TECHNOLOGY LTD

USA . 28,908 parts In-Stock

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Problanco Electronics

Mexico . 4,106 parts In-Stock

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Microchip USA

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TANS Electronics

Latvia . 2,778 parts In-Stock

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Kulean Microsystems

USA . 2,595 parts In-Stock

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Corphita

USA . 2,320 parts In-Stock

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SupplyDigital Components

Austria . 1,330 parts In-Stock

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Singapore . 854 parts In-Stock

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UHIMA Technologies

Türkiye . 468 parts In-Stock

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Corohmni

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Overview

Looking for a reliable MOSFET gate driver that offers top-notch quality and performance? Look no further than the NCP3418ADR2G by Onsemi. With its small outline package style and dual terminal position, this gate driver is perfect for a wide range of applications. Whether you're working on power supplies or high side drivers, this product has you covered. Trust Onsemi's reputation for excellence and choose the NCP3418ADR2G for all your gate driver needs. Experience the value and benefits this product brings to your projects today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable and long-lasting applications.

Surface Mount: YES

Surface mount capability allows for easy and convenient installation on circuit boards, saving space and simplifying the assembly process.

Maximum Supply Voltage: 13.2 V

The high maximum supply voltage of 13.2 V provides flexibility and reliability in various power supply configurations and applications.

Package Shape: RECTANGULAR

The rectangular package shape offers a compact design, maximizing board space and making it suitable for tight layouts.

Power Supplies (V): 12

With a nominal supply voltage of 12 V, this gate driver is optimized for efficient and stable performance in typical operating conditions.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures reliable operation even in demanding environments or under heavy load.

Minimum Operating Temperature: 0 °C

The low minimum operating temperature of 0 °C guarantees functionality in a wide range of temperature conditions, from cold to hot climates.

Terminal Finish: Tin (Sn)

The tin terminal finish provides excellent solderability and corrosion resistance, ensuring secure connections for long-lasting performance.

Interface IC Type: HALF BRIDGE BASED MOSFET DRIVER

The half bridge based MOSFET driver interface IC type offers efficient switching and control of MOSFETs in half bridge configurations, enabling precise power delivery.

Technical Specifications

MOSFET Gate Drivers NCP3418ADR2G attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

Interface IC Type:

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

4.9 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

12

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

MOSFET Drivers

Maximum Supply Voltage:

13.2 V

Minimum Supply Voltage:

4.6 V

Nominal Supply Voltage:

12 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Turn-off Time:

.06 us

Turn-on Time:

.06 us

Width:

3.9 mm

Trade Compliance

NCP3418ADR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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