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NCP303150DMNTWG

Onsemi

NCP303150DMNTWG by Onsemi

NCP303150DMNTWG by Onsemi is a MOSFET Gate Driver with a max supply voltage of 5.5V and high side driver feature. It operates in automotive temperature grade range (-40 to 125°C) and has a turn-on time of 0.02us, making it ideal for automotive applications requiring precise control and high current output up to 80A.

Median Price

$1.502

Lifecycle Status

EOL

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,217 parts In-Stock

1+ parts

$2.870

100+ parts

$1.760

1k+ parts

$1.561

10k+ parts

-

2,217

$2.870

$1.760

$1.561

-

Rochester

USA . 75,307 parts In-Stock

1+ parts

-

100+ parts

$1.380

1k+ parts

$1.230

10k+ parts

$1.160

75,307

-

$1.380

$1.230

$1.160

Verical

USA . 56,952 parts In-Stock

1+ parts

-

100+ parts

-

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$1.625

10k+ parts

$1.525

56,952

-

-

$1.625

$1.525

Mouser Electronics

USA . 3,521 parts In-Stock

1+ parts

-

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$1.370

3,521

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$1.370

Flip Electronics (Authorized)

USA . 2,282 parts In-Stock

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-

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2,282

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Distributors (In-Stock)

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Vyrian

USA . 1,762 parts In-Stock

1+ parts

$1.370

100+ parts

-

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1,762

$1.370

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Digiode

USA . 1,667 parts In-Stock

1+ parts

$1.520

100+ parts

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1,667

$1.520

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-

Chip Stock

USA . 22,000 parts In-Stock

1+ parts

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22,000

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Flip Electronics

USA . 2,282 parts In-Stock

1+ parts

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100+ parts

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1k+ parts

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2,282

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 235 parts In-Stock

1+ parts

$1.370

100+ parts

-

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235

$1.370

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Corphita

USA . 704 parts In-Stock

1+ parts

$1.440

100+ parts

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704

$1.440

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Continental Prestige Electronics

USA . 69,355 parts In-Stock

1+ parts

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100+ parts

$1.930

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69,355

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$1.930

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Lixinc

USA . 19,490 parts In-Stock

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19,490

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Perfect Parts

USA . 9,710 parts In-Stock

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9,710

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Kepictronics

USA . 9,000 parts In-Stock

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9,000

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SupplyDigital Components

Austria . 7,596 parts In-Stock

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7,596

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TANS Electronics

Latvia . 6,497 parts In-Stock

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6,497

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Problanco Electronics

Mexico . 4,716 parts In-Stock

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4,716

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Kulean Microsystems

USA . 3,501 parts In-Stock

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3,501

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Microchip USA

USA . 2,021 parts In-Stock

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2,021

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Authorized Procurement Solutions

USA . 1,840 parts In-Stock

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1,840

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UHIMA Technologies

Türkiye . 336 parts In-Stock

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336

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Overview

Unlock the potential of your electronic devices with the NCP303150DMNTWG by Onsemi, a high-quality MOSFET Gate Driver that delivers exceptional performance and reliability. Designed for automotive applications, this surface-mount device boasts a wide range of operating temperatures and a compact package style, making it ideal for various projects. With Onsemi's reputation for excellence in semiconductor manufacturing, you can trust that this gate driver offers superior value and benefits. Experience seamless integration, precise control, and enhanced efficiency with the NCP303150DMNTWG. Elevate your designs with Onsemi today.

Feature Benefit Bullets

Surface Mount:YES

The surface mount feature makes it easy to integrate into circuit boards, saving space and reducing assembly time.

Maximum Supply Voltage: 5.5 V

The maximum supply voltage of 5.5V ensures compatibility with a wide range of power sources, increasing flexibility in design.

Package Shape: RECTANGULAR

The rectangular package shape allows for easy placement and alignment on the circuit board, providing stability during operation.

Maximum Operating Temperature: 125 °C

With a maximum operating temperature of 125°C, this MOSFET gate driver can withstand high temperature environments, ensuring reliability under varying conditions.

Nominal Output Peak Current Limit: 80 A

The high nominal output peak current limit of 80A allows for efficient driving of MOSFETs, making it suitable for high-power applications.

Technical Specifications

MOSFET Gate Drivers NCP303150DMNTWG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

JESD-30 Code:

R-XBCC-N41

JESD-609 Code:

e3

Length:

6 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

41

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

80 A

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.85 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

20 V

Minimum Supply Voltage-1:

4.5 V

Nominal Supply Voltage-1:

19 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.03 us

Turn-on Time:

.02 us

Width:

5 mm

Trade Compliance

NCP303150DMNTWG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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