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NCP302035LMNTWG

Onsemi

NCP302035LMNTWG by Onsemi

NCP302035LMNTWG by Onsemi is a MOSFET Gate Driver with 31 terminals, operating voltage range of 4.5-5.5V, and peak output current limit of 70A. Ideal for automotive applications due to its high side driver feature and wide temperature range (-40 to 125 °C). Package style includes chip carrier and very thin profile suitable for surface mount assembly.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 2,191 parts In-Stock

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Digiode

USA . 1,457 parts In-Stock

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Kulean Microsystems

USA . 7,318 parts In-Stock

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Problanco Electronics

Mexico . 6,708 parts In-Stock

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SupplyDigital Components

Austria . 6,670 parts In-Stock

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TANS Electronics

Latvia . 6,008 parts In-Stock

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UHIMA Technologies

Türkiye . 375 parts In-Stock

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Corohmni

South Africa . 361 parts In-Stock

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Corphita

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Overview

Discover the cutting-edge NCP302035LMNTWG MOSFET Gate Driver by Onsemi, a top-tier manufacturer known for its superior quality and innovative technology. Designed for a wide range of applications, this chip carrier with a very thin profile offers unparalleled reliability and performance. With a nominal output peak current limit of 70 A and a maximum supply voltage of 5.5 V, this automotive-grade gate driver is the perfect solution for your next project. Upgrade your system with Onsemi's advanced technology and experience the benefits of high side driving and peak reflow temperatures up to 260 °C. Elevate your design with the NCP302035LMNTWG and unlock a new level of efficiency and accuracy.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material offers durability and protection to the internal components of the MOSFET gate driver, ensuring a longer lifespan.

Surface Mount: YES

The surface mount capability makes it easy to integrate the MOSFET gate driver onto PCBs, saving space and simplifying the assembly process.

Maximum Supply Voltage: 5.5 V

With a maximum supply voltage of 5.5V, this MOSFET gate driver can handle a wide range of input voltages, making it versatile for different applications.

No. of Terminals: 31

Having 31 terminals allows for a greater level of connectivity and control over various functions in the circuit, enhancing the flexibility of the MOSFET gate driver.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125 °C ensures reliability and stability even in demanding environments or under heavy loads.

Width: 5 mm

The compact width of 5mm allows for easy integration into tight spaces or densely populated PCB layouts, optimizing design efficiency.

High Side Driver: YES

The presence of a high side driver allows for efficient and accurate control of the MOSFET switches, enhancing overall performance and reliability of the system.

Nominal Output Peak Current Limit: 70 A

With a high nominal output peak current limit of 70A, this MOSFET gate driver can handle heavy loads and high current requirements, making it suitable for power electronics applications.

Technical Specifications

MOSFET Gate Drivers NCP302035LMNTWG attributes and parameters. Explore more MOSFET Gate Drivers devices from Onsemi

Specs

High Side Driver:

YES

JESD-30 Code:

S-PQCC-N31

JESD-609 Code:

e3

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

31

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Nominal Output Peak Current Limit:

70 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

.8 mm

Maximum Supply Current:

2 mA

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

4.5 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

Tin (Sn)

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

5 mm

Trade Compliance

NCP302035LMNTWG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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