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UCC21732DWR

Texas Instruments

UCC21732DWR by Texas Instruments

UCC21732DWR by Texas Instruments is a MOSFET gate driver with a max supply voltage of 5.5V and a max output current of 10A. It is commonly used in automotive applications for driving IGBTs or MOSFETs, offering standard input characteristics and a turn-on/off time of 0.13us.

Median Price

$5.620

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Texas Instruments

USA . 18,246 parts In-Stock

1+ parts

$3.345

100+ parts

$2.931

1k+ parts

$1.656

10k+ parts

-

18,246

$3.345

$2.931

$1.656

-

Mouser Electronics

USA . 2,032 parts In-Stock

1+ parts

$5.620

100+ parts

$3.590

1k+ parts

$3.360

10k+ parts

$3.260

2,032

$5.620

$3.590

$3.360

$3.260

DigiKey

USA . 1,933 parts In-Stock

1+ parts

$5.670

100+ parts

$3.632

1k+ parts

$3.484

10k+ parts

-

1,933

$5.670

$3.632

$3.484

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 3,914 parts In-Stock

1+ parts

$3.178

100+ parts

-

1k+ parts

-

10k+ parts

-

3,914

$3.178

-

-

-

Nova Conductors

Japan . 100 parts In-Stock

1+ parts

$3.670

100+ parts

-

1k+ parts

-

10k+ parts

-

100

$3.670

-

-

-

Vyrian

USA . 7,626 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

7,626

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 8,030 parts In-Stock

1+ parts

$2.770

100+ parts

-

1k+ parts

-

10k+ parts

-

8,030

$2.770

-

-

-

Semicontronic

India . 7,727 parts In-Stock

1+ parts

$2.770

100+ parts

$2.701

1k+ parts

$2.687

10k+ parts

-

7,727

$2.770

$2.701

$2.687

-

Corohmni

South Africa . 462 parts In-Stock

1+ parts

$2.916

100+ parts

-

1k+ parts

-

10k+ parts

-

462

$2.916

-

-

-

Corphita

USA . 600 parts In-Stock

1+ parts

$3.010

100+ parts

-

1k+ parts

-

10k+ parts

-

600

$3.010

-

-

-

Continental Prestige Electronics

USA . 6,154 parts In-Stock

1+ parts

$3.670

100+ parts

-

1k+ parts

-

10k+ parts

$3.597

6,154

$3.670

-

-

$3.597

Argo Parts USA

USA . 1,867 parts In-Stock

1+ parts

$3.670

100+ parts

-

1k+ parts

-

10k+ parts

-

1,867

$3.670

-

-

-

Netroflash

USA . 1,000 parts In-Stock

1+ parts

$3.670

100+ parts

-

1k+ parts

$3.487

10k+ parts

$3.413

1,000

$3.670

-

$3.487

$3.413

Advanced Electronics

New Zealand . 5,000 parts In-Stock

1+ parts

$7.482

100+ parts

$7.108

1k+ parts

$7.108

10k+ parts

-

5,000

$7.482

$7.108

$7.108

-

Parana Technologies

USA . 1,995 parts In-Stock

1+ parts

$7.685

100+ parts

-

1k+ parts

$8.211

10k+ parts

-

1,995

$7.685

-

$8.211

-

DigiPath Technology Company

USA . 878 parts In-Stock

1+ parts

$8.462

100+ parts

$7.785

1k+ parts

-

10k+ parts

-

878

$8.462

$7.785

-

-

ChromeModa Solutions

Germany . 3,853 parts In-Stock

1+ parts

$8.635

100+ parts

$7.081

1k+ parts

-

10k+ parts

-

3,853

$8.635

$7.081

-

-

IDEA Electronic Components Group

UK . 1,895 parts In-Stock

1+ parts

$8.635

100+ parts

$8.203

1k+ parts

$7.772

10k+ parts

-

1,895

$8.635

$8.203

$7.772

-

QUARKTWIN TECHNOLOGY LTD

USA . 11,139 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

11,139

-

-

-

-

Robosynatics

Brazil . 150 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

150

-

-

-

-

Lucentia Tech

USA . 150 parts In-Stock

1+ parts

-

100+ parts

$0.818

1k+ parts

$0.818

10k+ parts

$0.818

150

-

$0.818

$0.818

$0.818

Overview

Discover the UCC21732DWR by Texas Instruments, a high-quality MOSFET gate driver that offers exceptional performance and reliability. With its small outline package and surface mount design, this driver is perfect for a wide range of applications in industries such as automotive, power electronics, and industrial automation. Experience the benefits of its advanced features, including a maximum output current of 10A, a wide operating temperature range, and a fast turn-on and turn-off time. Trust Texas Instruments, a trusted manufacturer known for delivering cutting-edge solutions, to provide you with a high-value product that will meet all your needs. Upgrade your designs with the UCC21732DWR and unlock new possibilities today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides durability and protects the internal components of the gate driver, ensuring reliable performance in various operating conditions.

Maximum Supply Voltage: 5.5 V

With a maximum supply voltage of 5.5V, this gate driver is compatible with a wide range of power sources, making it versatile for multiple applications.

Output Characteristics: OPEN-DRAIN

The open-drain output characteristics allow for easy interfacing with other components, enhancing flexibility in circuit design.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature of 125 °C, this gate driver can withstand harsh environmental conditions, making it suitable for automotive applications.

Nominal Output Peak Current Limit: 10 A

The 10A nominal output peak current limit ensures that the gate driver can handle high current loads, making it suitable for driving MOSFETs in power electronics applications.

Technical Specifications

MOSFET Gate Drivers UCC21732DWR attributes and parameters. Explore more MOSFET Gate Drivers devices from Texas Instruments

Specs

High Side Driver:

YES

Input Characteristics:

STANDARD

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

10.3 mm

Moisture Sensitivity Level (MSL):

3

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Maximum Output Current:

10 A

Nominal Output Peak Current Limit:

10 A

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.4

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Seated Height:

2.65 mm

Maximum Supply Voltage:

5.5 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Maximum Supply Voltage-1:

33 V

Minimum Supply Voltage-1:

13 V

Nominal Supply Voltage-1:

15 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Turn-off Time:

.13 us

Turn-on Time:

.13 us

Width:

7.5 mm

Trade Compliance

UCC21732DWR Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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