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NCP112DR2G

Onsemi

NCP112DR2G by Onsemi

NCP112DR2G by Onsemi is a Power Management IC with 14 terminals, operating voltage of 4.5-16V, and adjustable threshold. It is a surface-mount device with small outline package ideal for power supply support circuits in applications requiring temp range of 0-85 °C.

Median Price

$0.515

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,445 parts In-Stock

1+ parts

-

100+ parts

$0.515

1k+ parts

$0.428

10k+ parts

$0.381

2,445

-

$0.515

$0.428

$0.381

DigiKey

USA . 2,445 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.440

10k+ parts

$0.440

2,445

-

-

$0.440

$0.440

Verical

USA . 2,445 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.534

10k+ parts

$0.476

2,445

-

-

$0.534

$0.476

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 724 parts In-Stock

1+ parts

$0.401

100+ parts

-

1k+ parts

-

10k+ parts

-

724

$0.401

-

-

-

Vyrian

USA . 1,662 parts In-Stock

1+ parts

$0.422

100+ parts

-

1k+ parts

-

10k+ parts

-

1,662

$0.422

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 2,020 parts In-Stock

1+ parts

$0.380

100+ parts

-

1k+ parts

-

10k+ parts

-

2,020

$0.380

-

-

-

Vigor

Singapore . 796 parts In-Stock

1+ parts

$0.410

100+ parts

-

1k+ parts

-

10k+ parts

-

796

$0.410

-

-

-

Corohmni

South Africa . 465 parts In-Stock

1+ parts

$0.422

100+ parts

-

1k+ parts

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465

$0.422

-

-

-

Kepictronics

USA . 20,000 parts In-Stock

1+ parts

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100+ parts

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20,000

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QUARKTWIN TECHNOLOGY LTD

USA . 13,981 parts In-Stock

1+ parts

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13,981

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SupplyDigital Components

Austria . 7,455 parts In-Stock

1+ parts

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7,455

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Kulean Microsystems

USA . 4,923 parts In-Stock

1+ parts

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4,923

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Microchip USA

USA . 4,110 parts In-Stock

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4,110

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Continental Prestige Electronics

USA . 2,445 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

$0.500

10k+ parts

-

2,445

-

-

$0.500

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Problanco Electronics

Mexico . 1,417 parts In-Stock

1+ parts

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1,417

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TANS Electronics

Latvia . 1,071 parts In-Stock

1+ parts

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1,071

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UHIMA Technologies

Türkiye . 799 parts In-Stock

1+ parts

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799

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Perfect Parts

USA . 560 parts In-Stock

1+ parts

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560

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Overview

Enhance your power management solutions with the NCP112DR2G by Onsemi. Crafted with precision and reliability, this Power Management IC offers unparalleled performance in a compact package. Ideal for a range of applications, this product boasts high-quality materials and advanced technology that provide maximum efficiency and durability. Trust Onsemi's expertise in the field to deliver superior results and elevate your projects to new heights. Experience the value and benefits of this innovative product today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic material provides durability and protection for the IC, ensuring long-term reliability.

Surface Mount: YES

Surface mount capability enables easy and efficient integration onto circuit boards, saving space and simplifying assembly processes.

Nominal Supply Voltage (Vsup): 5 V

Operating at 5V makes it compatible with a wide range of electronic devices, offering versatility in application.

Maximum Operating Temperature: 85 °C

High maximum operating temperature allows the IC to function reliably in demanding environmental conditions.

Terminal Finish: TIN

Tin finish on terminals ensures good conductivity and solderability for secure connections.

Width (mm): 3.9 mm

Compact width of 3.9mm facilitates efficient board layout and enables space-saving integration.

Minimum Supply Voltage (Vsup): 4.5 V

Supporting supply voltage as low as 4.5V ensures compatibility with a wide range of power sources.

Maximum Supply Current (Isup): 5 mA

Low maximum supply current consumption of 5mA minimizes power usage and enhances energy efficiency.

Terminal Pitch: 1.27 mm

Fine terminal pitch of 1.27mm allows for high-density mounting, ideal for space-constrained designs.

Adjustable Threshold: YES

Feature of adjustable threshold allows for customization and optimization of the IC's performance to specific requirements.

Technical Specifications

Power Management ICs NCP112DR2G attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

YES

JESD-30 Code:

R-PDSO-G14

JESD-609 Code:

e3

Length:

8.65 mm

Moisture Sensitivity Level (MSL):

1

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP14,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Power Management Circuits

Maximum Supply Current (Isup):

5 mA

Maximum Supply Voltage (Vsup):

16 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width (mm):

3.9 mm

Trade Compliance

NCP112DR2G Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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