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NCP1835BMNR2

Onsemi

NCP1835BMNR2 by Onsemi

NCP1835BMNR2 by Onsemi is a Power Management IC with 10 terminals, suitable for power supply support circuits. It operates b/w -20 °C to 70°C, with Vsup ranging from 2.8V to 6.5V. This surface-mount IC has a small outline package style and a max seated height of 1mm, making it ideal for compact applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 6,583 parts In-Stock

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Digiode

USA . 701 parts In-Stock

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701

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AZTECH Wire

Italy . 1,002 parts In-Stock

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$19.280

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$19.280

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Problanco Electronics

Mexico . 7,670 parts In-Stock

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SupplyDigital Components

Austria . 6,293 parts In-Stock

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TANS Electronics

Latvia . 5,296 parts In-Stock

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Kulean Microsystems

USA . 3,245 parts In-Stock

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Corphita

USA . 1,144 parts In-Stock

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UHIMA Technologies

Türkiye . 898 parts In-Stock

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Corohmni

South Africa . 439 parts In-Stock

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Microchip USA

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Overview

Enhance the efficiency of your power management systems with the NCP1835BMNR2 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality Power Management ICs that are essential for various applications. With its compact square package and dual terminal position, this IC offers reliability and precision. Experience seamless power supplies with a nominal voltage of 5V and a wide supply range from 2.8V to 6.5V. Trust Onsemi to provide high-performance solutions that cater to your power management needs. Step up your game with the NCP1835BMNR2 and elevate your systems to new heights.

Feature Benefit Bullets

Surface Mount: YES

Easy to integrate into circuit boards without the need for additional mounting hardware.

Package Shape: SQUARE

Provides a compact and efficient design for applications with limited space.

Nominal Supply Voltage (Vsup): 5 V

Works well with standard 5V power sources commonly found in many electronic devices.

Power Supplies (V): 3/5

Provides flexibility in power supply options for different applications.

No. of Terminals: 10

Enough terminals for connecting various components and peripherals to the IC.

Package Style: SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Efficient heat dissipation and space-saving design for optimal performance in compact devices.

Maximum Operating Temperature: 70 °C

Can operate in high-temperature environments without compromising performance.

Minimum Operating Temperature: -20 °C

Can operate in low-temperature environments without issues.

Terminal Finish: TIN LEAD

Provides good electrical conductivity and solderability for reliable connections.

Terminal Position: DUAL

Allows for flexibility in board layout and connection options.

Maximum Seated Height: 1 mm

Low profile for space-constrained applications.

Width (mm): 3 mm

Compact size for fitting into small devices.

Other IC type: POWER SUPPLY SUPPORT CIRCUIT

Specifically designed for power management applications, ensuring efficient performance.

Minimum Supply Voltage (Vsup): 2.8 V

Wide range of supply voltage options for compatibility with different power sources.

Peak Reflow Temperature °C: 235

Can withstand high-temperature reflow soldering processes during assembly.

Length: 3 mm

Compact size for space-saving installation.

Temperature Grade: COMMERCIAL

Suitable for use in standard commercial applications.

Terminal Form: NO LEAD

Lead-free terminal form for compliance with environmental regulations.

Terminal Pitch: 0.5 mm

Fine pitch for compact layout and efficient signal routing.

Maximum Supply Voltage (Vsup): 6.5 V

Works with a wide range of power sources for increased versatility.

Technical Specifications

Power Management ICs NCP1835BMNR2 attributes and parameters. Explore more Power Management ICs devices from Onsemi

Specs

Adjustable Threshold:

NO

JESD-30 Code:

S-XDSO-N10

JESD-609 Code:

e0

Length:

3 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

10

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

UNSPECIFIED

Package Code:

Package Equivalence Code:

SOLCC10,.12,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

235

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Sub-Category:

Power Management Circuits

Maximum Supply Voltage (Vsup):

6.5 V

Minimum Supply Voltage (Vsup):

2.8 V

Nominal Supply Voltage (Vsup):

5 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

NO LEAD

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Width (mm):

3 mm

Trade Compliance

NCP1835BMNR2 Other Function Semiconductors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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