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MMBFJ310LT3

Onsemi

MMBFJ310LT3 by Onsemi

MMBFJ310LT3 by Onsemi is an N-CHANNEL RF FET with a 25V DS breakdown voltage, operating in DEPLETION MODE. It is ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND due to its small outline package and 2.5pF feedback capacitance.

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 2,202 parts In-Stock

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Digiode

USA . 2,055 parts In-Stock

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Nova Conductors

Japan . 94 parts In-Stock

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AZTECH Wire

Italy . 325 parts In-Stock

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$9.322

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Ampacity Inc.

Singapore . 388 parts In-Stock

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$18.050

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Kulean Microsystems

USA . 5,105 parts In-Stock

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Problanco Electronics

Mexico . 4,699 parts In-Stock

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SupplyDigital Components

Austria . 4,471 parts In-Stock

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Corphita

USA . 1,871 parts In-Stock

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TANS Electronics

Latvia . 1,512 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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UHIMA Technologies

Türkiye . 980 parts In-Stock

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Corohmni

South Africa . 176 parts In-Stock

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Overview

Upgrade your amplifier design with the MMBFJ310LT3 from Onsemi, a top-of-the-line RF Small Signal Field Effect Transistor that guarantees exceptional quality and performance. Designed for ultra-high frequency applications, this N-channel transistor features a depletion mode and is perfect for amplification tasks. Its gull-wing terminals and small outline package make it easy to mount and use in various projects. Trust Onsemi's reputation for excellence and innovation, and experience the value and benefits that the MMBFJ310LT3 brings to your designs. Power up your amplifier projects with reliability and precision today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material for protection and long-lasting use.

Polarity or Channel Type: N-CHANNEL

Suitable for amplifying signals with N-channel devices.

Minimum DS Breakdown Voltage: 25 V

Provides a high breakdown voltage for reliable operation.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications.

Surface Mount: YES

Easy to install and suitable for compact designs.

Maximum Power Dissipation (Abs): 0.225 W

Efficient power dissipation to prevent overheating.

Operating Mode: DEPLETION MODE

Offers depletion mode operation for specific applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ideal for use in high-frequency applications.

No. of Terminals: 3

Simple and easy to connect with only 3 terminals.

Maximum Operating Temperature: 150 °C

Can operate efficiently at high temperatures.

Transistor Element Material: SILICON

Reliable semiconductor material for consistent performance.

Maximum Feedback Capacitance (Crss): 2.5 pF

Low feedback capacitance for improved stability.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) MMBFJ310LT3 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

25 V

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2.5 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

MMBFJ310LT3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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