Loading...

MGB19N35CLT4

Onsemi

MGB19N35CLT4 by Onsemi

MGB19N35CLT4 by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 380V and a Max Collector Current of 19A. It features a built-in diode and resistor, making it ideal for AUTOMOTIVE IGNITION applications. This IGBT has a small outline package style, GULL WING terminals, and can operate at temperatures up to 175 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 663 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

663

-

-

-

-

Vyrian

USA . 344 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

344

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

SupplyDigital Components

Austria . 5,107 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,107

-

-

-

-

Problanco Electronics

Mexico . 1,137 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,137

-

-

-

-

Corphita

USA . 870 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

870

-

-

-

-

TANS Electronics

Latvia . 726 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

726

-

-

-

-

UHIMA Technologies

Türkiye . 581 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

581

-

-

-

-

Corohmni

South Africa . 293 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

293

-

-

-

-

Kulean Microsystems

USA . 187 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

187

-

-

-

-

Overview

Enhance your automotive ignition systems with the MGB19N35CLT4 by Onsemi, a high-quality N-CHANNEL IGBT with a built-in diode and resistor. Designed for maximum performance and durability, this transistor offers unmatched reliability and efficiency. Whether you're looking to optimize your ignition system or enhance electronic controls, this IGBT is the perfect choice. Trust Onsemi's expertise in semiconductor technology to deliver top-notch solutions for all your automotive needs. Elevate your projects with the MGB19N35CLT4 – the ultimate power component for your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and durability for automotive applications.

Polarity or Channel Type: N-CHANNEL

Enhances performance and efficiency in switching circuits.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and saves space by integrating additional components.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems for reliable performance.

Surface Mount: YES

Allows for easy and secure mounting on a circuit board.

Maximum Rise Time (tr): 6000 ns

Ensures fast switching speed for efficient operation.

Maximum Fall Time (tf): 22000 ns

Ideal for applications requiring controlled turn-off times.

Nominal Turn Off Time (toff): 25000 ns

Provides precise turn-off timing for smooth operation.

Maximum Power Dissipation (Abs): 165 W

Capable of handling high power levels for demanding applications.

Maximum Operating Temperature: 175 °C

Can operate in high-temperature environments typical of automotive systems.

Maximum Collector-Emitter Voltage: 380 V

Suitable for applications requiring high voltage switching.

Maximum Gate-Emitter Voltage: 22 V

Provides sufficient voltage for effective gate control.

Maximum Collector Current (IC): 19 A

Handles high current loads for automotive ignition systems.

Maximum Gate-Emitter Threshold Voltage: 2 V

Precise threshold voltage for reliable switching.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MGB19N35CLT4 attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

380 V

Maximum Fall Time (tf):

22000 ns

Maximum Gate-Emitter Threshold Voltage:

2 V

Maximum Gate-Emitter Voltage:

22 V

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Maximum Rise Time (tr):

6000 ns

Sub-Category:

Insulated Gate BIP Transistors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

25000 ns

Nominal Turn On Time (ton):

6500 ns

Trade Compliance

MGB19N35CLT4 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 6