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MGB15N40CLT4G

Onsemi

MGB15N40CLT4G by Onsemi

MGB15N40CLT4G by Onsemi is an N-CHANNEL IGBT with a max collector current of 15A and a collector-emitter voltage of 440V. It features a built-in diode and resistor, suitable for automotive ignition applications. This surface-mount transistor has a nominal turn-off time of 20500ns and operates at temperatures up to 175 °C.

Median Price

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TANS Electronics

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Kulean Microsystems

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SupplyDigital Components

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UHIMA Technologies

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Overview

Enhance your automotive ignition systems with the MGB15N40CLT4G by Onsemi. Crafted with precision and expertise, this Insulated Gate Bipolar Transistor offers unparalleled performance and reliability. With a single configuration featuring a built-in diode and resistor, this N-Channel transistor is designed for seamless integration in your applications. Whether you're looking to optimize efficiency or enhance power management, the MGB15N40CLT4G delivers exceptional value and benefits. Trust Onsemi to provide cutting-edge solutions for all your electronic needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the internal components, making the IGBT durable and reliable for automotive applications.

Polarity or Channel Type: N-CHANNEL

N-Channel IGBTs typically have lower on-state voltage drop, higher input impedance, and faster switching characteristics compared to P-Channel IGBTs, making them suitable for automotive ignition systems.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

The built-in diode and resistor simplify circuit design and reduce the need for external components, improving overall system efficiency and reliability.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring optimal performance and reliability in this application.

Surface Mount: YES

Easily mountable on PCBs, saving space and enabling automated assembly processes for cost-effective production.

Package Shape: RECTANGULAR

Rectangular package shape allows for efficient placement on PCBs and compact integration into automotive ignition systems.

Nominal Turn Off Time (toff): 20500 ns

Fast turn-off time helps in reducing switching losses and improving efficiency in high-frequency applications such as automotive ignition systems.

No. of Terminals: 2

Simple 2-terminal connection for easy integration into circuit designs, reducing complexity and potential points of failure.

Package Style (Meter): SMALL OUTLINE

Compact small outline package design saves space on PCBs, making it suitable for automotive applications with limited space constraints.

Maximum Operating Temperature: 175 °C

High maximum operating temperature ensures reliable performance in automotive environments with varying temperature conditions.

Maximum Collector-Emitter Voltage: 440 V

High collector-emitter voltage rating allows for handling high-voltage automotive ignition circuits with safety and reliability.

Transistor Element Material: SILICON

Silicon-based IGBT technology offers high efficiency, fast switching speeds, and low conduction losses, ideal for automotive ignition applications.

Maximum Collector Current (IC): 15 A

Able to handle higher collector currents for automotive ignition systems, ensuring reliable performance under varying load conditions.

Terminal Position: SINGLE

Single terminal position simplifies connection and installation, reducing installation errors and ensuring proper functionality in automotive ignition systems.

Case Connection: COLLECTOR

Collector case connection provides a secure and reliable connection point for external components in automotive ignition circuits.

Nominal Turn On Time (ton): 6000 ns

Fast turn-on time facilitates quick switching and response in automotive ignition systems, improving overall system performance.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MGB15N40CLT4G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

VOLTAGE CLAMPING

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

440 V

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

20500 ns

Nominal Turn On Time (ton):

6000 ns

Trade Compliance

MGB15N40CLT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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