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MGB15N35CLT4G

Onsemi

MGB15N35CLT4G by Onsemi

MGB15N35CLT4G by Onsemi is an N-CHANNEL IGBT with a max Collector-Emitter Voltage of 380V and a Collector Current of 15A. It features a built-in diode and resistor, making it ideal for AUTOMOTIVE IGNITION applications. This IGBT has a Nominal Turn Off Time of 20500ns and Nominal Turn On Time of 6000ns, suitable for automotive systems requiring high power switching capabilities.

Median Price

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Lifecycle Status

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2

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1k+

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Vyrian

USA . 2,199 parts In-Stock

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Digiode

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Metaverse IC Inc.

Canada . 56,986 parts In-Stock

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Kepictronics

USA . 13,000 parts In-Stock

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TANS Electronics

Latvia . 7,503 parts In-Stock

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Kulean Microsystems

USA . 5,870 parts In-Stock

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Problanco Electronics

Mexico . 4,062 parts In-Stock

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SupplyDigital Components

Austria . 2,828 parts In-Stock

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 889 parts In-Stock

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Overview

Enhance the performance of your automotive ignition systems with the MGB15N35CLT4G from Onsemi. As a trusted manufacturer in the semiconductor industry, Onsemi delivers top-quality Insulated Gate Bipolar Transistors (IGBT) like this N-channel single configuration with built-in diode and resistor. Designed for surface mount applications, this IGBT offers reliability and efficiency while maximizing power control. Upgrade your automotive ignition systems today with the MGB15N35CLT4G and experience superior performance and durability.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good electrical insulation and protection, making the product durable and reliable.

Polarity or Channel Type: N-CHANNEL

Enables efficient current flow and control in the circuit, enhancing performance.

Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR

Simplifies circuit design and reduces component count, leading to cost-effectiveness.

Transistor Application: AUTOMOTIVE IGNITION

Specifically designed for automotive ignition systems, ensuring compatibility and reliability in such applications.

Surface Mount: YES

Facilitates easy PCB assembly and saves space, ideal for compact automotive electronic systems.

Package Shape: RECTANGULAR

Optimal shape for efficient heat dissipation and space utilization in the circuit design.

Nominal Turn Off Time (toff): 20500 ns

Provides precise control over switching OFF operation, enhancing overall performance and efficiency.

No. of Terminals: 2

Simplified connectivity with only 2 terminals, reducing wiring complexity and improving reliability.

Package Style (Meter): SMALL OUTLINE

Compact package design saves space and allows for densely populated PCBs in automotive applications.

Maximum Collector-Emitter Voltage: 380 V

High voltage handling capability ensures durability and reliability in automotive environments.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability, making the product suitable for demanding automotive applications.

Maximum Collector Current (IC): 15 A

High current rating allows for reliable operation in automotive ignition systems with heavy load requirements.

Terminal Position: SINGLE

Simplified connection design with a single terminal, reducing potential points of failure and improving overall reliability.

Case Connection: COLLECTOR

Optimal connection for the collector terminal, ensuring efficient heat dissipation and electrical performance.

Nominal Turn On Time (ton): 6000 ns

Fast turn-on time enhances overall performance and efficiency in automotive ignition applications.

Technical Specifications

Insulated Gate Bipolar Transistors (IGBT) MGB15N35CLT4G attributes and parameters. Explore more Insulated Gate Bipolar Transistors (IGBT) devices from Onsemi

Specs

Additional Features:

VOLTAGE CLAMPING

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

380 V

JESD-30 Code:

R-PSSO-G2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AUTOMOTIVE IGNITION

Transistor Element Material:

SILICON

Nominal Turn Off Time (toff):

20500 ns

Nominal Turn On Time (ton):

6000 ns

Trade Compliance

MGB15N35CLT4G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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