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MC74VHC1GT04DT1G

Onsemi

MC74VHC1GT04DT1G by Onsemi

MC74VHC1GT04DT1G by Onsemi is a logic gate with 9.5ns propagation delay, 50pF load capacitance, and 3.3V nominal voltage. Ideal for military applications due to its CMOS technology and operating temperature range of -55 °C to 125°C.

Median Price

$0.074

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,372 parts In-Stock

1+ parts

-

100+ parts

$0.079

1k+ parts

$0.066

10k+ parts

$0.059

3,372

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$0.079

$0.066

$0.059

Avnet

USA . 3,372 parts In-Stock

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$0.070

10k+ parts

$0.070

3,372

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$0.070

$0.070

Distributors (In-Stock)

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Digiode

USA . 936 parts In-Stock

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$0.062

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936

$0.062

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Chip Stock

USA . 45,383 parts In-Stock

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45,383

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Vyrian

USA . 4,059 parts In-Stock

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Corphita

USA . 2,468 parts In-Stock

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$0.058

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2,468

$0.058

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Corohmni

South Africa . 219 parts In-Stock

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$0.065

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219

$0.065

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AZTECH Wire

Italy . 491 parts In-Stock

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$15.740

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491

$15.740

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TANS Electronics

Latvia . 8,368 parts In-Stock

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SupplyDigital Components

Austria . 7,473 parts In-Stock

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Problanco Electronics

Mexico . 6,049 parts In-Stock

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Kulean Microsystems

USA . 4,694 parts In-Stock

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A-Z Elektronik GmbH

Germany . 4,634 parts In-Stock

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Kepictronics

USA . 3,500 parts In-Stock

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UHIMA Technologies

Türkiye . 487 parts In-Stock

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Microchip USA

USA . 154 parts In-Stock

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Overview

Discover the power of the MC74VHC1GT04DT1G by Onsemi, a top-tier manufacturer known for quality and reliability. This logic gate offers fast propagation delay and low power consumption, making it ideal for a wide range of applications. From consumer electronics to industrial automation, this versatile component delivers high performance and efficiency. Trust Onsemi to provide cutting-edge technology that meets your needs and enhances your projects. Upgrade to the MC74VHC1GT04DT1G today and experience superior results like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the logic gates, ensuring a longer lifespan.

Propagation Delay At Nominal Supply: 9.5 ns

Offers fast signal processing, making this product suitable for high-speed applications.

Surface Mount: YES

Facilitates easy and efficient PCB assembly, saving time and effort during manufacturing.

Nominal Supply Voltage / Vsup (V): 3.3

Works efficiently at a common supply voltage, making it compatible with various systems and devices.

Load Capacitance (CL): 50 pF

Suitable for driving moderate loads without compromising performance or stability.

Power Supplies (V): 3.3/5

Offers flexibility in power requirements, accommodating different voltage inputs for versatile applications.

Maximum I (ol): 8 Amp

Capable of driving higher current loads, ensuring reliable operation in demanding scenarios.

Minimum Operating Temperature: -55 °C

Operates reliably in extreme cold conditions, ideal for applications that require a wide temperature range.

Technology: CMOS

Utilizes CMOS technology for low power consumption, making it energy-efficient and suitable for battery-powered devices.

Maximum Supply Voltage (Vsup): 5.5 V

Can handle higher supply voltages, providing a wider operating range for various applications.

Technical Specifications

Logic Gates MC74VHC1GT04DT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Peak Reflow Temperature (C):

260

Power Supplies (V):

3.3/5

Propagation Delay At Nominal Supply:

9.5 ns

Propagation Delay (tpd):

17.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

3.3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Width:

1.5 mm

Trade Compliance

MC74VHC1GT04DT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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