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MC74VHC1G86DBVT1G

Onsemi

MC74VHC1G86DBVT1G by Onsemi

MC74VHC1G86DBVT1G by Onsemi is a CMOS Logic Gate with 2 inputs, 12ns propagation delay, and 19.5ns tpd. Ideal for military applications, it operates b/w -55 to 125 °C with a supply voltage range of 2-5.5V.

Median Price

-

Lifecycle Status

EOL

Suppliers In-Stock

5

In-Stock Inventory

1k+

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Flip Electronics (Authorized)

USA . 54,000 parts In-Stock

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USA . 54,000 parts In-Stock

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AZTECH Wire

Italy . 548 parts In-Stock

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Problanco Electronics

Mexico . 7,649 parts In-Stock

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SupplyDigital Components

Austria . 6,169 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 887 parts In-Stock

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Kulean Microsystems

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Microchip USA

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Overview

Experience the reliability and efficiency of Onsemi with the MC74VHC1G86DBVT1G Logic Gate. This high-quality component offers a fast propagation delay, low power consumption, and a wide operating temperature range, making it ideal for a variety of applications. From consumer electronics to industrial machinery, this versatile logic gate delivers consistent performance and precision. Trust Onsemi for cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 12 ns

Low propagation delay ensures fast processing of signals, making this product suitable for applications requiring quick response times.

Nominal Supply Voltage: 3V

Operating at a common voltage level of 3V makes it compatible with a wide range of electronic circuits and systems.

Maximum Operating Temperature: 125 °C

With a high maximum operating temperature, this product can withstand harsh environmental conditions and maintain performance reliability.

Technology: CMOS

CMOS technology offers low power consumption and high noise immunity, making this product energy efficient and reliable in noisy environments.

Package Style: SMALL OUTLINE, THIN PROFILE

Compact and thin package design saves space on circuit boards and allows for efficient heat dissipation, making it ideal for compact electronic devices.

Technical Specifications

Logic Gates MC74VHC1G86DBVT1G attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

3 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSOP5/6,.11,37

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE

Packing Method:

TR

Peak Reflow Temperature (C):

260

Maximum Power Supply Current (ICC):

.04 mA

Propagation Delay At Nominal Supply:

12 ns

Propagation Delay (tpd):

19.5 ns

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.95 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

15 mm

Trade Compliance

MC74VHC1G86DBVT1G Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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