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MC74VHC1G01DFT2G-L22038

Onsemi

MC74VHC1G01DFT2G-L22038 by Onsemi

MC74VHC1G01DFT2G-L22038 by Onsemi is a logic gate with 2 inputs, 3V nominal voltage, and 15.5ns propagation delay. It is used in applications requiring open-drain output characteristics, operates b/w -55 to 125 °C, and has a small outline package style.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,672 parts In-Stock

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Digiode

USA . 2,267 parts In-Stock

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Microchip USA

USA . 9,987 parts In-Stock

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$0.324

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AZTECH Wire

Italy . 584 parts In-Stock

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$21.850

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Problanco Electronics

Mexico . 8,155 parts In-Stock

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SupplyDigital Components

Austria . 7,177 parts In-Stock

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TANS Electronics

Latvia . 5,866 parts In-Stock

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Kulean Microsystems

USA . 3,844 parts In-Stock

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Corphita

USA . 1,080 parts In-Stock

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UHIMA Technologies

Türkiye . 989 parts In-Stock

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Corohmni

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Overview

Discover the MC74VHC1G01DFT2G-L22038 by Onsemi, a high-quality logic gate perfect for a wide range of applications. With Onsemi's reputation for excellence in semiconductor manufacturing, this product offers unmatched reliability and performance. Ideal for circuit design, automation, and signal processing, this logic gate provides customers with precise, efficient functionality. Trust Onsemi to deliver cutting-edge technology that meets your needs and exceeds your expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material makes the package lightweight and durable, making it suitable for portable devices.

Surface Mount: YES

Surface mount technology allows for easy and convenient installation on a PCB, saving space and making assembly faster.

No. of Inputs: 2

Having 2 inputs allows for basic logic operations such as AND, OR, and NOT, providing flexibility in circuit design.

Nominal Supply Voltage / Vsup (V): 3

Operating at a nominal supply voltage of 3V makes it compatible with a wide range of electronic devices and power sources.

Output Characteristics: OPEN-DRAIN

Open-drain output allows for easy interfacing with other components and enables wired logic OR functionality.

Technology: CMOS

Using CMOS technology results in low power consumption and high noise immunity, enhancing overall performance and efficiency.

Technical Specifications

Logic Gates MC74VHC1G01DFT2G-L22038 attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

AHC/VHC/H/U/V

JESD-30 Code:

R-PDSO-G5

Length:

2 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

8 Amp

No. of Functions:

1

No. of Inputs:

2

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Maximum Power Supply Current (ICC):

50 mA

Propagation Delay (tpd):

15.5 ns

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.25 mm

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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