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MC74HCT366ADG

Onsemi

MC74HCT366ADG by Onsemi

MC74HCT366ADG by Onsemi is a 6-bit logic gate with 3-STATE output, featuring 36ns propagation delay at 3V. It operates in a temperature range of -55 to 125 °C and has a max supply voltage of 6V. Ideal for military-grade applications requiring fast signal processing in compact spaces.

Median Price

$0.274

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 27,468 parts In-Stock

1+ parts

-

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$0.284

1k+ parts

$0.236

10k+ parts

$0.210

27,468

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$0.284

$0.236

$0.210

Verical

USA . 27,468 parts In-Stock

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$0.263

27,468

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$0.263

Distributors (In-Stock)

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Digiode

USA . 1,457 parts In-Stock

1+ parts

$0.233

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1,457

$0.233

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Vyrian

USA . 4,036 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 26,969 parts In-Stock

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$0.198

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26,969

$0.198

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Corphita

USA . 2,223 parts In-Stock

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$0.220

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2,223

$0.220

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Corohmni

South Africa . 492 parts In-Stock

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$0.245

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492

$0.245

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AZTECH Wire

Italy . 70 parts In-Stock

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$14.110

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70

$14.110

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Continental Prestige Electronics

USA . 27,468 parts In-Stock

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$0.202

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27,468

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$0.202

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Problanco Electronics

Mexico . 5,237 parts In-Stock

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Kulean Microsystems

USA . 2,662 parts In-Stock

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TANS Electronics

Latvia . 1,180 parts In-Stock

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UHIMA Technologies

Türkiye . 902 parts In-Stock

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SupplyDigital Components

Austria . 627 parts In-Stock

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Microchip USA

USA . 104 parts In-Stock

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Overview

Discover the unparalleled quality and reliability of the MC74HCT366ADG logic gate by Onsemi. This innovative product offers customers a wide range of applications, from industrial automation to consumer electronics. With a focus on performance and efficiency, Onsemi has designed this logic gate to provide exceptional value and benefits to users. Say goodbye to delays and inefficiencies with the MC74HCT366ADG - the perfect solution for all your logic gate needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the logic gates suitable for a wide range of applications.

Propagation Delay At Nominal Supply: 36 ns

With a low propagation delay, these logic gates can quickly process signals, making them efficient for time-sensitive applications.

Surface Mount: YES

Surface mount technology allows for easy installation and compact design, saving space on PCBs.

No. of Functions: 6

Having multiple functions in one package reduces the need for additional components, simplifying circuit design.

Nominal Supply Voltage / Vsup (V): 3

Operating at a low supply voltage of 3V makes these logic gates energy-efficient, suitable for battery-powered devices.

Load Capacitance (CL): 50 pF

The low load capacitance helps in reducing signal distortion and maintaining signal integrity in high-frequency applications.

Power Supplies (V): 5

Supporting multiple power supplies allows for flexibility in circuit design and deployment.

No. of Terminals: 16

Having a sufficient number of terminals enables easy integration with other components and connectivity for different input/output configurations.

Maximum I (ol): 6 Amp

With a high maximum output current, these logic gates can drive loads efficiently without the need for additional amplifiers.

Output Characteristics: 3-STATE

The 3-STATE output allows for a high degree of flexibility in controlling the logic level, enabling bus sharing and other advanced circuit configurations.

Technology: CMOS

CMOS technology offers low power consumption, high noise immunity, and compatibility with a wide range of digital systems.

Technical Specifications

Logic Gates MC74HCT366ADG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Control Type:

ENABLE LOW

Family:

HCT

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e3

Length:

9.9 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

6 Amp

Moisture Sensitivity Level (MSL):

1

No. of Bits:

6

No. of Functions:

6

No. of Inputs:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

3-STATE

Output Polarity:

INVERTED

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Packing Method:

RAIL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

36 ns

Propagation Delay (tpd):

180 ns

Qualification:

Not Qualified

Maximum Seated Height:

1.75 mm

Sub-Category:

Bus Driver/Transceivers

Maximum Supply Voltage (Vsup):

6 V

Minimum Supply Voltage (Vsup):

2 V

Nominal Supply Voltage / Vsup (V):

3

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3.9 mm

Trade Compliance

MC74HCT366ADG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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