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MC74ACT86NG

Onsemi

MC74ACT86NG by Onsemi

MC74ACT86NG by Onsemi is a CMOS Logic Gates IC with 4 functions and 2 inputs. It operates at a supply voltage of 5V, has a propagation delay of 10.5ns, and can handle load capacitance up to 50pF. Ideal for industrial applications requiring fast signal processing in temperature range -40 to 85 °C.

Median Price

$0.364

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 36,151 parts In-Stock

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$0.343

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$0.285

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$0.254

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$0.343

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Verical

USA . 22,525 parts In-Stock

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$0.386

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$0.318

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$0.318

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Digiode

USA . 287 parts In-Stock

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$0.268

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Vyrian

USA . 4,832 parts In-Stock

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EMSNET

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Elcom Components

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Inventory MP

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Bristol Electronics

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Distributors (Availability)

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Corphita

USA . 2,455 parts In-Stock

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$0.254

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Corohmni

South Africa . 459 parts In-Stock

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$0.282

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Component Stockers USA

USA . 69,265 parts In-Stock

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$0.290

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$0.270

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$0.250

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$0.250

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$0.270

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$0.250

AZTECH Wire

Italy . 998 parts In-Stock

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$19.330

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Continental Prestige Electronics

USA . 36,151 parts In-Stock

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TANS Electronics

Latvia . 6,958 parts In-Stock

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Problanco Electronics

Mexico . 4,451 parts In-Stock

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 763 parts In-Stock

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SupplyDigital Components

Austria . 376 parts In-Stock

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Microchip USA

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Overview

Unlock the power of reliable logic gates with the MC74ACT86NG by Onsemi. Trusted for its superior quality and performance, this product offers customers seamless integration and optimal functionality in various applications. Experience the benefits of fast propagation delay, multiple functions, and a durable package body material that ensures long-lasting use. Whether you're looking to enhance your industrial automation systems or streamline your electronic projects, the MC74ACT86NG is the ideal choice for delivering precision and efficiency. Trust Onsemi for cutting-edge technology that exceeds expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body material ensures durability and reliability.

Propagation Delay At Nominal Supply: 10.5 ns

The low propagation delay at nominal supply voltage allows for fast operation and efficient performance.

No. of Functions: 4

Having 4 functions in one logic gate provides versatility and functionality in a single component.

No. of Inputs: 2

With 2 inputs, this logic gate can process multiple signals simultaneously, increasing its application flexibility.

Nominal Supply Voltage / Vsup (V): 5

Operating at a nominal supply voltage of 5V makes it compatible with standard electronic systems.

Load Capacitance (CL): 50 pF

With a load capacitance of 50 pF, this logic gate can effectively drive connected components without signal degradation.

Power Supplies (V): 5

Operating at a power supply of 5V ensures stable and consistent performance.

No. of Terminals: 14

The 14 terminals provide ample connectivity options for interfacing with other components.

Maximum I (ol): 24 Amp

With a maximum output current of 24 Amp, this logic gate can handle high current loads with ease.

Minimum Operating Temperature: -40 °C

The wide minimum operating temperature range of -40 °C ensures functionality in a variety of environmental conditions.

Maximum Operating Temperature: 85 °C

The maximum operating temperature of 85 °C allows for reliable operation even in high-temperature environments.

Technology: CMOS

Using CMOS technology ensures low power consumption and high noise immunity for efficient operation.

Technical Specifications

Logic Gates MC74ACT86NG attributes and parameters. Explore more Logic Gates devices from Onsemi

Specs

Family:

ACT

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e3

Length:

18.86 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

24 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Packing Method:

RAIL

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Propagation Delay At Nominal Supply:

10.5 ns

Propagation Delay (tpd):

10.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

4.69 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

MC74ACT86NG Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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