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MC10H125FNG

Onsemi

MC10H125FNG by Onsemi

MC10H125FNG by Onsemi is a voltage level translator with 4 functions, operating at 5.25V max and 4.75V min. It features ECL technology, ECL to TTL translation interface, and quad terminal position. Ideal for commercial extended temperature grade applications requiring precise signal conversion in compact chip carrier package.

Median Price

$4.510

Lifecycle Status

Suppliers In-Stock

17

In-Stock Inventory

1k+

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Chip1Stop

Japan . 35 parts In-Stock

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$26.900

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Rochester

USA . 341 parts In-Stock

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$4.510

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$4.040

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$3.800

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Avnet

USA . 18 parts In-Stock

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$3.948

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$3.753

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NAC Semi

USA . 35 parts In-Stock

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Digiode

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Vyrian

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Elcom Components

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Nova Conductors

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Atlantic Semiconductor

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Bristol Electronics

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Ashlea Components Ltd

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First Choice Components Inc.

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LWI Electronics Inc

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ComSIT Distribution GmbH

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North Shore Components

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Sunrise Surplus Inc.

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Semtec, LLC

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Component Stockers USA

USA . 1,437 parts In-Stock

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$3.120

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$4.770

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$4.310

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Ampacity Inc.

Singapore . 1,216 parts In-Stock

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$4.280

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Corphita

USA . 2,037 parts In-Stock

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$4.527

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Corohmni

South Africa . 153 parts In-Stock

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$5.030

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AZTECH Wire

Italy . 816 parts In-Stock

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Microchip USA

USA . 440 parts In-Stock

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SupplyDigital Components

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TANS Electronics

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Problanco Electronics

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UHIMA Technologies

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Perfect Parts

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Kulean Microsystems

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Kepictronics

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GreenTree Electronics

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Cyclops Electronics Ltd (Excess)

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Authorized Procurement Solutions

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Overview

Unlock a world of seamless voltage translation with the MC10H125FNG by Onsemi. Crafted with precision and quality in mind, this voltage level translator provides unparalleled performance and reliability for your electronic projects. Ideal for a wide range of applications, this versatile chip carrier package is designed to effortlessly interface ECL signals to TTL signals, making it a must-have for any design engineer looking to streamline their circuitry. Elevate your designs with the trusted technology of Onsemi and experience the difference in efficiency and functionality that the MC10H125FNG brings to the table.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the components inside, ensuring a longer lifespan for the product.

Maximum Supply Voltage: 5.25 V

Allows for compatibility with a wide range of input voltages, making it versatile for different applications.

No. of Functions: 4

Offers multiple functions in a single device, reducing the need for additional components and simplifying circuit designs.

Output Polarity: TRUE

Ensures correct polarity for the output signals, preventing errors in data transmission.

Technology: ECL

Utilizes ECL technology for high-speed signal processing, making it suitable for applications requiring fast data transmission.

Technical Specifications

Voltage Level Translators MC10H125FNG attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

3.35 ns

Interface IC Type:

JESD-30 Code:

S-PQCC-J20

JESD-609 Code:

e3

Length:

8.965 mm

Moisture Sensitivity Level (MSL):

3

Nominal Negative Supply Voltage:

-5.2 V

No. of Bits:

1

No. of Functions:

4

No. of Terminals:

20

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Output Latch/Register:

NONE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC20,.4SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

5,-5.2

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8.965 mm

Trade Compliance

MC10H125FNG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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