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MC10H124FNG

Onsemi

MC10H124FNG by Onsemi

MC10H124FNG by Onsemi is a voltage level translator with 4 functions, operating at 5V. It features a max delay of 3.1ns and interface IC type as TTL to ECL translator. Ideal for applications requiring precise signal translation in commercial extended temperature environments.

Median Price

$5.604

Lifecycle Status

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21

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1k+

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Farnell

UK . 16,506 parts In-Stock

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$7.930

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$7.260

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$7.930

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Rochester

USA . 16,421 parts In-Stock

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$4.310

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$3.860

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$3.630

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$4.310

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$3.630

Verical

USA . 16,337 parts In-Stock

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$5.638

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$5.050

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$4.750

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$4.750

DigiKey

USA . 12,047 parts In-Stock

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$5.570

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Flip Electronics (Authorized)

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Digiode

USA . 378 parts In-Stock

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Nova Conductors

Japan . 51 parts In-Stock

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Vyrian

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DigiKey Marketplace

USA . 12,547 parts In-Stock

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Bristol Electronics

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Sea View Technologies

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Chip Stock

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Atlantic Semiconductor

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ComSIT Distribution GmbH

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GSS - Global Semi Support

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LIBRA Elektronik GmbH

Germany . 34 parts In-Stock

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Inventory MP

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EMSNET

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North Shore Components

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Semi Source

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Ampacity Inc.

Singapore . 14,619 parts In-Stock

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$4.280

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Corphita

USA . 185 parts In-Stock

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$4.527

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Corohmni

South Africa . 303 parts In-Stock

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Netroflash

USA . 2,000 parts In-Stock

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Continental Prestige Electronics

USA . 150 parts In-Stock

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Problanco Electronics

Mexico . 7,926 parts In-Stock

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Kulean Microsystems

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Argo Parts USA

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TANS Electronics

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SupplyDigital Components

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Microchip USA

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UHIMA Technologies

Türkiye . 544 parts In-Stock

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Kepictronics

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Assy Fe

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Overview

Upgrade your voltage level translation with the MC10H124FNG by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality products that guarantee reliability and performance. Ideal for various applications, this voltage level translator offers seamless compatibility and efficient operation. With its advanced technology and innovative design, the MC10H124FNG provides customers with unmatched value, ensuring smooth functionality and exceptional results every time. Choose Onsemi for superior products that elevate your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and protection for the internal components of the voltage level translator, ensuring a longer lifespan.

Maximum Supply Voltage: 5.25 V

With a high maximum supply voltage of 5.25 V, this voltage level translator can be used in a wide range of applications without the risk of overloading.

No. of Functions: 4

Having 4 functions allows for versatile voltage level translation capabilities, making this product suitable for complex circuit designs.

Package Shape: SQUARE

The square package shape makes it easy to mount and integrate this voltage level translator into existing circuit layouts.

Power Supplies (V): 5,-5.2

Support for both positive (5V) and negative (-5.2V) power supplies enables compatibility with various voltage requirements in different systems.

Maximum Operating Temperature: 75 °C

The high maximum operating temperature of 75°C ensures reliable performance even in environments with elevated temperatures.

Output Characteristics: OPEN-EMITTER

Open-emitter output characteristics provide flexibility for connecting to different types of external circuits, enhancing compatibility.

Maximum Delay: 3.1 ns

With a low maximum delay of 3.1 nanoseconds, this voltage level translator offers fast response times for efficient signal translation.

Technology: ECL

Using ECL technology ensures high-speed and accurate voltage level translation, making this product ideal for applications that require precise signal processing.

Nominal Supply Voltage: 5 V

The nominal supply voltage of 5V simplifies the integration of this voltage level translator into standard voltage systems.

Technical Specifications

Voltage Level Translators MC10H124FNG attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

3.1 ns

Interface IC Type:

JESD-30 Code:

S-PQCC-J20

JESD-609 Code:

e3

Length:

8.965 mm

Moisture Sensitivity Level (MSL):

3

Nominal Negative Supply Voltage:

-5.2 V

No. of Bits:

2

No. of Functions:

4

No. of Terminals:

20

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC20,.4SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

5,-5.2

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Maximum Time At Peak Reflow Temperature (s):

30

Width:

8.965 mm

Trade Compliance

MC10H124FNG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

NSN

5962-01-609-8569, 5962016098569

NIIN

016098569

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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