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SN65LVP18DRFRG4

Texas Instruments

SN65LVP18DRFRG4 by Texas Instruments

SN65LVP18DRFRG4 by Texas Instruments is a voltage level translator with a max supply voltage of 3.6V and operating temperature range from -40 to 85°C. It features PECL to LVDS translation, BICMOS technology, and a small outline package suitable for industrial applications.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,046 parts In-Stock

1+ parts

-

100+ parts

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4,046

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Vyrian

USA . 3,703 parts In-Stock

1+ parts

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100+ parts

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3,703

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,367 parts In-Stock

1+ parts

$12.564

100+ parts

-

1k+ parts

$13.017

10k+ parts

-

2,367

$12.564

-

$13.017

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DigiPath Technology Company

USA . 844 parts In-Stock

1+ parts

$13.835

100+ parts

-

1k+ parts

-

10k+ parts

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844

$13.835

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ChromeModa Solutions

Germany . 5,314 parts In-Stock

1+ parts

$14.117

100+ parts

$11.576

1k+ parts

-

10k+ parts

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5,314

$14.117

$11.576

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IDEA Electronic Components Group

UK . 1,567 parts In-Stock

1+ parts

$14.117

100+ parts

$13.411

1k+ parts

$12.705

10k+ parts

-

1,567

$14.117

$13.411

$12.705

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AZTECH Wire

Italy . 522 parts In-Stock

1+ parts

$15.134

100+ parts

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522

$15.134

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One Stop Electronics

USA . 312 parts In-Stock

1+ parts

$20.500

100+ parts

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312

$20.500

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Corphita

USA . 1,622 parts In-Stock

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1,622

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Overview

Unlock seamless communication between devices with the SN65LVP18DRFRG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers unmatched quality and reliability. Ideal for voltage level translation applications, this product offers superior performance and precision. With its compact design and wide operating temperature range, the SN65LVP18DRFRG4 is perfect for industrial environments. Experience faster data transmission and improved signal integrity with this innovative voltage level translator. Elevate your projects with Texas Instruments' cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and protection for the internal components of the voltage level translator.

Surface Mount: YES

The surface mount capability makes installation easier and more efficient, especially in compact electronic devices.

Maximum Supply Voltage: 3.6 V

Provides flexibility and compatibility with a wide range of voltage requirements in different electronic systems.

Power Supplies (V): 2.5/3.3

Supports multiple power supply options, making it versatile for various applications.

Maximum Operating Temperature: 85 °C

Ensures reliable performance even in high-temperature environments, suitable for industrial applications.

Technology: BICMOS

The use of BiCMOS technology combines the benefits of both bipolar and CMOS technologies, providing high speed and low power consumption.

Technical Specifications

Voltage Level Translators SN65LVP18DRFRG4 attributes and parameters. Explore more Voltage Level Translators devices from Texas Instruments

Specs

Maximum Delay:

.63 ns

Interface IC Type:

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.08,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

Other Interface ICs

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

2.375 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

SN65LVP18DRFRG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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