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SN65LVDS16DRFTG4

Texas Instruments

SN65LVDS16DRFTG4 by Texas Instruments

SN65LVDS16DRFTG4 by Texas Instruments is a voltage level translator with 2.5/3.3V power supplies, PECL to LVDS interface, and 0.63ns max delay. It is used in industrial applications for signal conversion b/w different logic levels with a temperature range of -40 to 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 3,567 parts In-Stock

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3,567

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Digiode

USA . 3,524 parts In-Stock

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3,524

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

AZTECH Wire

Italy . 360 parts In-Stock

1+ parts

$7.191

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360

$7.191

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Parana Technologies

USA . 2,139 parts In-Stock

1+ parts

$7.454

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$7.942

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2,139

$7.454

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$7.942

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DigiPath Technology Company

USA . 1,524 parts In-Stock

1+ parts

$8.208

100+ parts

$7.551

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$8.208

$7.551

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IDEA Electronic Components Group

UK . 1,936 parts In-Stock

1+ parts

$8.375

100+ parts

$7.956

1k+ parts

$7.538

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1,936

$8.375

$7.956

$7.538

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ChromeModa Solutions

Germany . 1,224 parts In-Stock

1+ parts

$8.375

100+ parts

$6.868

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1,224

$8.375

$6.868

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One Stop Electronics

USA . 202 parts In-Stock

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$21.500

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$21.500

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Corphita

USA . 1,300 parts In-Stock

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Overview

Experience the exceptional quality and reliability of Texas Instruments with the SN65LVDS16DRFTG4 voltage level translator. This versatile component offers seamless voltage translation for a wide range of applications, ensuring smooth and efficient operation. With advanced technology and precision engineering, this product delivers superior performance and durability. Trust Texas Instruments to provide you with innovative solutions that exceed your expectations. Elevate your projects with the SN65LVDS16DRFTG4 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan for the product.

Surface Mount: YES

Facilitates easy and convenient installation on PCBs, saving time during assembly.

Maximum Supply Voltage: 3.6 V

Supports a wide range of input voltages, making it versatile for various applications.

Package Shape: SQUARE

Allows for efficient use of space on the PCB, optimizing layout design.

Power Supplies (V): 2.5/3.3

Compatible with commonly used power supply voltages, increasing flexibility in system integration.

No. of Terminals: 8

Provides multiple connection points for interfacing with other components in the circuit.

Maximum Operating Temperature: 85 °C

Ensures reliable performance even in high-temperature environments, making it suitable for industrial applications.

Minimum Operating Temperature: -40 °C

Maintains functionality in cold conditions, enhancing the product's adaptability to different operating environments.

Technology: BICMOS

Combines the benefits of both bipolar and CMOS technologies, offering high-speed performance with low power consumption.

Technical Specifications

Voltage Level Translators SN65LVDS16DRFTG4 attributes and parameters. Explore more Voltage Level Translators devices from Texas Instruments

Specs

Additional Features:

IT ALSO OPERATES AT 3.3 V SUPPLY

Maximum Delay:

.63 ns

Interface IC Type:

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.08,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

Other Interface ICs

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

2.375 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

SN65LVDS16DRFTG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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