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V62/09606-01XE

Texas Instruments

V62/09606-01XE by Texas Instruments

V62/09606-01XE by Texas Instruments is a voltage level translator with 6 bits, operating b/w -55 to 125 °C. It features a max supply voltage of 18V and supports TTL/CMOS to CMOS translation. Ideal for military-grade applications requiring precise signal conversion in compact spaces.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 5,377 parts In-Stock

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5,377

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Digiode

USA . 187 parts In-Stock

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187

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Distributors (Availability)

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Parana Technologies

USA . 1,133 parts In-Stock

1+ parts

$13.123

100+ parts

-

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$13.625

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1,133

$13.123

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$13.625

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AZTECH Wire

Italy . 261 parts In-Stock

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$13.470

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261

$13.470

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DigiPath Technology Company

USA . 197 parts In-Stock

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$14.450

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197

$14.450

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IDEA Electronic Components Group

UK . 2,085 parts In-Stock

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$14.745

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$14.008

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$13.270

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2,085

$14.745

$14.008

$13.270

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ChromeModa Solutions

Germany . 1,200 parts In-Stock

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$14.745

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$12.091

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$14.745

$12.091

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One Stop Electronics

USA . 718 parts In-Stock

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$19.500

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718

$19.500

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Corphita

USA . 4,537 parts In-Stock

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Overview

Discover the innovative V62/09606-01XE voltage level translator by Texas Instruments, designed with precision and quality in mind. This versatile product is perfect for a wide range of applications, offering seamless signal translation with ease. With its compact design and advanced technology, this voltage level translator ensures reliable performance in extreme conditions. Trust Texas Instruments to deliver cutting-edge solutions that exceed expectations. Experience the value and benefits firsthand with the V62/09606-01XE - your ultimate choice for seamless voltage level translation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes the product lightweight and durable, ideal for portable and long-lasting applications.

Maximum Supply Voltage: 18 V

With a high maximum supply voltage of 18V, this voltage level translator can handle a wide range of input voltages, making it versatile for different voltage levels in various systems.

No. of Bits: 6

Having 6 bits allows for precise and accurate voltage level translation, making it suitable for applications that require multiple voltage level conversions.

Maximum Operating Temperature: 125 °C

The high maximum operating temperature of 125°C ensures the product can operate efficiently even in extreme temperature conditions, enhancing its reliability.

Technology: CMOS

Utilizing CMOS technology enables low power consumption and high speed operation, making this voltage level translator efficient and fast in voltage level translating tasks.

Technical Specifications

Voltage Level Translators V62/09606-01XE attributes and parameters. Explore more Voltage Level Translators devices from Texas Instruments

Specs

Maximum Delay:

550 ns

Input Characteristics:

STANDARD

Interface IC Type:

JESD-30 Code:

R-PDSO-G16

JESD-609 Code:

e4

Length:

5 mm

Moisture Sensitivity Level (MSL):

1

No. of Bits:

6

No. of Functions:

1

No. of Terminals:

16

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Output Characteristics:

PUSH-PULL

Output Latch/Register:

NONE

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP16,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

5/15

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Sub-Category:

Level Translators

Maximum Supply Current:

.018 mA

Maximum Supply Voltage:

18 V

Minimum Supply Voltage:

5 V

Nominal Supply Voltage:

10 V

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

4.4 mm

Trade Compliance

V62/09606-01XE Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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