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MC100ELT22DT

Onsemi

MC100ELT22DT by Onsemi

MC100ELT22DT by Onsemi is a voltage level translator with 2 functions, operating b/w -40 to 85 °C. It has a supply voltage range of 4.75V to 5.25V and offers fast signal translation with a max delay of 1.5ns. Ideal for industrial applications requiring TTL/CMOS to PECL translation in compact spaces due to its small outline package style.

Median Price

$7.690

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Electronics Inc.

Canada . 215 parts In-Stock

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$7.690

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$5.770

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$5.000

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$7.690

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Vyrian

USA . 1,580 parts In-Stock

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Digiode

USA . 1,097 parts In-Stock

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A&K Electronics

USA . 10 parts In-Stock

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Prism Electronics

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Bristol Electronics

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Benley Electronics

USA . 40 parts In-Stock

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$0.550

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40

$0.550

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Corohmni

South Africa . 244 parts In-Stock

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$7.690

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QUARKTWIN TECHNOLOGY LTD

USA . 20,908 parts In-Stock

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Problanco Electronics

Mexico . 6,817 parts In-Stock

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TANS Electronics

Latvia . 4,231 parts In-Stock

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Metaverse IC Inc.

Canada . 3,000 parts In-Stock

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SupplyDigital Components

Austria . 1,697 parts In-Stock

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UHIMA Technologies

Türkiye . 602 parts In-Stock

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Kulean Microsystems

USA . 300 parts In-Stock

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Corphita

USA . 115 parts In-Stock

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Perfect Parts

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Overview

Experience seamless voltage level translation with the MC100ELT22DT by Onsemi, a trusted manufacturer known for delivering top-quality components. This versatile device is perfect for various applications in the electronics industry, offering reliable performance and precise signal conversion. Enhance your projects with this compact and efficient voltage translator that boasts a wide operating temperature range, dual terminal position, and a small outline package style. Trust Onsemi to provide you with cutting-edge technology that meets your needs and exceeds your expectations. Upgrade your designs with the MC100ELT22DT today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Durable material that offers good protection for the internal components of the voltage level translator.

Maximum Supply Voltage: 5.25 V

Can handle high voltage levels, providing flexibility and compatibility with various systems.

No. of Functions: 2

Allows for multiple functions to be performed within a single device, reducing the need for additional components.

Minimum Operating Temperature: -40 °C

Can operate in extreme cold temperatures, making it suitable for a wide range of environments.

Nominal Supply Voltage: 5 V

Standard voltage level that is commonly used in many electronic systems, ensuring compatibility.

Maximum Delay: 1.5 ns

Provides fast signal translation, enabling quick and efficient communication between different voltage levels.

Technical Specifications

Voltage Level Translators MC100ELT22DT attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

1.5 ns

Interface IC Type:

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Length:

3 mm

Nominal Negative Supply Voltage:

-4.5 V

No. of Bits:

1

No. of Functions:

2

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

-4.5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL100K

Temperature Grade:

Terminal Finish:

Tin/Lead (Sn90Pb10)

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

MC100ELT22DT Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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