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NB4N121KMNR2

Onsemi

NB4N121KMNR2 by Onsemi

NB4N121KMNR2 by Onsemi is a voltage level translator with a max supply voltage of 3.6V and min of 3V. It operates in temperatures ranging from -40 to 70 °C, featuring an interface IC type of PECL to CML translator. With a compact square package style and 52 terminals, it is ideal for applications requiring fast signal translation with minimal delay at high frequencies.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 1,897 parts In-Stock

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Vyrian

USA . 1,381 parts In-Stock

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Problanco Electronics

Mexico . 5,472 parts In-Stock

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Kulean Microsystems

USA . 5,092 parts In-Stock

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TANS Electronics

Latvia . 2,143 parts In-Stock

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SupplyDigital Components

Austria . 479 parts In-Stock

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Corohmni

South Africa . 401 parts In-Stock

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Corphita

USA . 277 parts In-Stock

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UHIMA Technologies

Türkiye . 169 parts In-Stock

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Overview

Unlock new possibilities with the NB4N121KMNR2 by Onsemi, a cutting-edge voltage level translator that promises unparalleled quality and reliability. Manufactured by the reputable Onsemi, this product is designed to exceed expectations in various applications. From enhancing signal integrity to improving system performance, this voltage level translator offers unmatched value and benefits to customers. Experience seamless communication between different voltage domains with the NB4N121KMNR2, and elevate your projects to new heights of success.

Feature Benefit Bullets

Surface Mount: YES

This product can be easily mounted on a circuit board, making it convenient for assembly and integration into electronic devices.

Maximum Supply Voltage: 3.6 V

Can handle high supply voltages, providing a wide operating range for compatibility with various systems.

Package Shape: SQUARE

The square shape allows for efficient use of space on the circuit board and easier alignment during installation.

No. of Terminals: 52

Having a high number of terminals allows for multiple connections, enabling complex circuit designs and functionalities.

Maximum Operating Temperature: 70 °C

Capable of operating at high temperatures, ensuring reliability and performance in demanding environments.

Minimum Operating Temperature: -40 °C

Can operate in cold temperatures, making it suitable for a wide range of applications in varying climates.

Width: 8 mm

Compact width makes it suitable for applications where space is limited, enabling versatile use in different devices.

Nominal Supply Voltage: 3.3 V

Close to the typical supply voltage used in many electronic systems, ensuring compatibility and easy integration.

Maximum Delay: 0.95 ns

Low delay time ensures fast signal translation, maintaining signal integrity and efficiency in data transmission.

Interface IC Type: PECL TO CML TRANSLATOR

Specific interface type for translating signals, ensuring accurate data conversion and compatibility with different signal standards.

Technical Specifications

Voltage Level Translators NB4N121KMNR2 attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

.95 ns

Interface IC Type:

JESD-30 Code:

S-XQCC-N52

Length:

8 mm

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

52

Maximum Operating Temperature:

70 Cel

Minimum Operating Temperature:

-40 Cel

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

UNSPECIFIED

Package Code:

Package Shape:

Package Style (Meter):

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

Qualification:

Not Qualified

Maximum Seated Height:

1 mm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

QUAD

Width:

8 mm

Trade Compliance

NB4N121KMNR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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