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NB4N11MDTR2G

Onsemi

NB4N11MDTR2G by Onsemi

NB4N11MDTR2G by Onsemi is a voltage level translator with a max supply voltage of 3.6V and min operating temperature of -40 °C. It features an output polarity of complementary and interface IC type as PECL to CML translator, making it ideal for industrial applications requiring precise signal translation in compact spaces.

Median Price

$8.700

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 2,244 parts In-Stock

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$8.700

100+ parts

$5.790

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10k+ parts

$5.070

2,244

$8.700

$5.790

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$5.070

Flip Electronics (Authorized)

USA . 5,000 parts In-Stock

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Flip Electronics

USA . 7,500 parts In-Stock

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7,500

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Chip Stock

USA . 3,200 parts In-Stock

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Vyrian

USA . 3,056 parts In-Stock

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Digiode

USA . 987 parts In-Stock

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987

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A2Z Electronics, Inc.

USA . 700 parts In-Stock

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700

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Distributors (Availability)

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Microchip USA

USA . 3,835 parts In-Stock

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$14.601

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3,835

$14.601

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AZTECH Wire

Italy . 829 parts In-Stock

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$20.080

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829

$20.080

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Perfect Parts

USA . 9,826 parts In-Stock

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TANS Electronics

Latvia . 7,190 parts In-Stock

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SupplyDigital Components

Austria . 2,299 parts In-Stock

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2,299

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iodParts Technologies Inc.

India . 2,184 parts In-Stock

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Authorized Procurement Solutions

USA . 1,701 parts In-Stock

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Problanco Electronics

Mexico . 1,603 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 1,100 parts In-Stock

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Corphita

USA . 822 parts In-Stock

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Kulean Microsystems

USA . 586 parts In-Stock

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Infinite Electronics LLP (Excess)

. 530 parts In-Stock

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530

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UHIMA Technologies

Türkiye . 376 parts In-Stock

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376

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Corohmni

South Africa . 357 parts In-Stock

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Overview

Unlock new possibilities with the NB4N11MDTR2G by Onsemi, a top-notch voltage level translator designed to meet your needs. Manufactured by Onsemi, a trusted leader in the industry, this versatile device is perfect for applications requiring precise signal translation. With a compact design and high-quality materials, this product offers unmatched reliability and performance. Say goodbye to compatibility issues and experience seamless communication between different voltage levels. Upgrade your projects today with the NB4N11MDTR2G and elevate your work to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the voltage level translator.

Maximum Supply Voltage: 3.6 V

Allows for compatibility with a wide range of input voltage levels, making it versatile for different applications.

Minimum Supply Voltage: 3 V

Ensures stability and proper performance even at lower supply voltage levels.

Output Characteristics: OPEN-COLLECTOR

Facilitates easy connection to other circuitry and allows for flexibility in signal output.

Temperature Grade: INDUSTRIAL

Suitable for industrial environments with a wide operating temperature range, ensuring reliability in harsh conditions.

Maximum Delay: 0.6 ns

Provides fast signal translation, minimizing delays in data transmission.

Technical Specifications

Voltage Level Translators NB4N11MDTR2G attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

.6 ns

Interface IC Type:

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e3

Length:

3 mm

Moisture Sensitivity Level (MSL):

3

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-COLLECTOR

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Temperature Grade:

Terminal Finish:

MATTE TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

3 mm

Trade Compliance

NB4N11MDTR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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