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MC100H605FNR2G

Onsemi

MC100H605FNR2G by Onsemi

MC100H605FNR2G by Onsemi is a 6-function ECL to TTL translator with 28 terminals. It operates b/w -4.5V to 5.25V, has a max delay of 6.7ns, and supports true output polarity. Ideal for voltage level translation in high-speed digital applications with operating temperatures ranging from 0 °C to 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 2,500 parts In-Stock

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Vyrian

USA . 1,250 parts In-Stock

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1,250

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Kulean Microsystems

USA . 6,130 parts In-Stock

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6,130

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Problanco Electronics

Mexico . 3,998 parts In-Stock

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SupplyDigital Components

Austria . 3,491 parts In-Stock

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TANS Electronics

Latvia . 1,973 parts In-Stock

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Corphita

USA . 638 parts In-Stock

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UHIMA Technologies

Türkiye . 463 parts In-Stock

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463

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Corohmni

South Africa . 424 parts In-Stock

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Microchip USA

USA . 400 parts In-Stock

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Overview

Unleash the power of seamless voltage level translation with the MC100H605FNR2G by Onsemi. As a trusted manufacturer, Onsemi delivers top-quality products that excel in performance and reliability. Ideal for a wide range of applications, this voltage level translator offers unparalleled value, benefits, and advantages to customers looking for a robust solution. Elevate your projects with the MC100H605FNR2G and experience superior functionality like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material ensures durability and resistance against environmental factors, making the product reliable for long-term use.

Maximum Supply Voltage: 5.25 V

With a high maximum supply voltage, the product can handle a wide range of input voltages, providing flexibility in various applications.

No. of Functions: 6

Having multiple functions in a single device reduces the need for additional components, simplifying the design and saving space.

Minimum Operating Temperature: 0 °C

The product can operate effectively in low-temperature environments, ensuring reliability in various working conditions.

Maximum Delay: 6.7 ns

With low delay, the product enables fast signal translation, making it suitable for high-speed applications where timing is critical.

Technical Specifications

Voltage Level Translators MC100H605FNR2G attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

6.7 ns

Interface IC Type:

JESD-30 Code:

S-PQCC-J28

JESD-609 Code:

e3

Length:

11.505 mm

Nominal Negative Supply Voltage:

-4.5 V

No. of Bits:

1

No. of Functions:

6

No. of Terminals:

28

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

0 Cel

Output Latch/Register:

REGISTER

Output Polarity:

TRUE

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

LDCC28,.5SQ

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Power Supplies (V):

-4.5

Qualification:

Not Qualified

Maximum Seated Height:

4.57 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

QUAD

Width:

11.505 mm

Trade Compliance

MC100H605FNR2G Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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