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SN65LVP16DRFTG4

Texas Instruments

SN65LVP16DRFTG4 by Texas Instruments

SN65LVP16DRFTG4 by Texas Instruments is a voltage level translator with 2.5/3.3V power supplies, PECL to LVDS interface, and 0.63ns max delay. It is used in industrial applications for translating signals b/w different voltage levels efficiently and accurately. The IC features a small outline package with dual terminals and operates within a wide temperature range of -40 to 85°C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 8,918 parts In-Stock

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8,918

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Digiode

USA . 1,147 parts In-Stock

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1,147

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Parana Technologies

USA . 2,257 parts In-Stock

1+ parts

$9.779

100+ parts

$908.158

1k+ parts

$8.801

10k+ parts

-

2,257

$9.779

$908.158

$8.801

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DigiPath Technology Company

USA . 441 parts In-Stock

1+ parts

$10.768

100+ parts

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441

$10.768

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IDEA Electronic Components Group

UK . 1,201 parts In-Stock

1+ parts

$10.988

100+ parts

$10.439

1k+ parts

$9.889

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-

1,201

$10.988

$10.439

$9.889

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ChromeModa Solutions

Germany . 1,170 parts In-Stock

1+ parts

$10.988

100+ parts

$9.010

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-

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1,170

$10.988

$9.010

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AZTECH Wire

Italy . 538 parts In-Stock

1+ parts

$14.290

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538

$14.290

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One Stop Electronics

USA . 240 parts In-Stock

1+ parts

$32.500

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240

$32.500

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Corphita

USA . 2,128 parts In-Stock

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Overview

Elevate your voltage level translation game with the SN65LVP16DRFTG4 by Texas Instruments. As a leading manufacturer in the industry, Texas Instruments delivers top-quality products like this voltage level translator designed for industrial-grade applications. With a compact square package style and a wide operating temperature range, this versatile device offers seamless compatibility and reliable performance. Upgrade your electronic systems with the SN65LVP16DRFTG4 for enhanced efficiency and precision.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides a lightweight and durable construction for the product, making it suitable for a variety of applications.

Surface Mount: YES

The surface mount feature allows for easy and secure installation on printed circuit boards, saving space and facilitating mass production.

Maximum Supply Voltage: 3.6 V

With a high maximum supply voltage, this product can handle a wide range of power supply requirements in different systems.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature ensures reliable performance even in challenging industrial environments where temperatures can vary.

Technology: BICMOS

The use of BiCMOS technology allows for high-speed operation and low power consumption, enhancing the efficiency of the voltage level translator.

Technical Specifications

Voltage Level Translators SN65LVP16DRFTG4 attributes and parameters. Explore more Voltage Level Translators devices from Texas Instruments

Specs

Additional Features:

IT ALSO OPERATES AT 3.3 V SUPPLY

Maximum Delay:

.63 ns

Interface IC Type:

JESD-30 Code:

S-PDSO-N8

JESD-609 Code:

e4

Length:

2 mm

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

SOLCC8,.08,20

Package Shape:

Package Style (Meter):

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/3.3

Qualification:

Not Qualified

Maximum Seated Height:

.8 mm

Sub-Category:

Other Interface ICs

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

2.375 V

Nominal Supply Voltage:

2.5 V

Surface Mount:

YES

Technology:

BICMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

.5 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Width:

2 mm

Trade Compliance

SN65LVP16DRFTG4 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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