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MC100EPT24DTR2

Onsemi

MC100EPT24DTR2 by Onsemi

MC100EPT24DTR2 by Onsemi is a voltage level translator with max supply voltage of 3.6V, min operating temp -40 °C, and delay of 0.8ns. It's used for translating LVTTL/LVCMOS to LVECL signals in industrial applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 3,451 parts In-Stock

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Digiode

USA . 1,484 parts In-Stock

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AZTECH Wire

Italy . 709 parts In-Stock

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$11.450

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709

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Kulean Microsystems

USA . 8,259 parts In-Stock

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Problanco Electronics

Mexico . 7,499 parts In-Stock

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TANS Electronics

Latvia . 6,318 parts In-Stock

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SupplyDigital Components

Austria . 4,820 parts In-Stock

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Microchip USA

USA . 3,249 parts In-Stock

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Kepictronics

USA . 2,485 parts In-Stock

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Corphita

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Corohmni

South Africa . 234 parts In-Stock

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UHIMA Technologies

Türkiye . 95 parts In-Stock

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Perfect Parts

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Overview

Unlock the potential of your electronic designs with the MC100EPT24DTR2 by Onsemi. As a leading manufacturer in the industry, Onsemi guarantees top-notch quality and reliability. This voltage level translator is versatile and can be used in various applications, offering seamless compatibility and smooth signal translation. Experience the value and benefits of this innovative product, providing customers with a competitive edge in their projects. Trust Onsemi to deliver excellence with the MC100EPT24DTR2.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the internal components of the voltage level translator, ensuring a longer lifespan.

Surface Mount: YES

Ease of installation and space-saving design make this voltage level translator suitable for compact electronic applications.

Maximum Supply Voltage: 3.6 V

Ability to handle high supply voltages makes this product versatile and compatible with a wide range of electronic systems.

Minimum Supply Voltage: 3 V

Can operate effectively at low supply voltages, ensuring reliable performance in various power conditions.

Maximum Operating Temperature: 85 °C

Withstands high temperatures, making it suitable for industrial applications where heat dissipation is important.

Minimum Operating Temperature: -40 °C

Capable of operating in extreme cold environments, providing reliability in a wide range of temperature conditions.

Terminal Finish: TIN LEAD

Provides good electrical conductivity and corrosion resistance for the terminals, ensuring stable connections.

Width: 3 mm

Compact design allows for space-efficient placement on circuit boards, ideal for applications with limited space.

Output Polarity: COMPLEMENTARY

Complementary outputs provide both high and low logic levels, enhancing compatibility with different types of circuits.

Technology: ECL

ECL technology offers high-speed performance and low power consumption, making this voltage level translator suitable for high-speed data applications.

Technical Specifications

Voltage Level Translators MC100EPT24DTR2 attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

.8 ns

JESD-30 Code:

S-PDSO-G8

JESD-609 Code:

e0

Length:

3 mm

Moisture Sensitivity Level (MSL):

1

Nominal Negative Supply Voltage:

-3.3 V

No. of Bits:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.19

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Peak Reflow Temperature (C):

235

Power Supplies (V):

-4.5

Qualification:

Not Qualified

Maximum Seated Height:

1.1 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

3.6 V

Minimum Supply Voltage:

3 V

Nominal Supply Voltage:

3.3 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

3 mm

Trade Compliance

MC100EPT24DTR2 Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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