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MC10H351MG

Onsemi

MC10H351MG by Onsemi

MC10H351MG by Onsemi is a voltage level translator with 4 functions, operating at 5V. It has a max supply voltage of 5.25V and delay of 2.2ns, suitable for TTL/NMOS to ECL translation applications in commercial extended temperature environments.

Median Price

$13.200

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 1 parts In-Stock

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$12.510

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1

$12.510

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Chip1Stop

Japan . 1 parts In-Stock

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$12.510

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$12.510

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DigiKey

USA . 2,201 parts In-Stock

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$15.280

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2,201

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$15.280

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Rochester

USA . 2,184 parts In-Stock

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$13.200

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$11.810

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$11.110

2,184

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$13.200

$11.810

$11.110

Verical

USA . 2,089 parts In-Stock

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$16.500

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$14.762

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2,089

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$16.500

$14.762

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 478 parts In-Stock

1+ parts

$11.884

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478

$11.884

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Vyrian

USA . 935 parts In-Stock

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$12.510

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935

$12.510

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Distributors (Availability)

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Corphita

USA . 2,436 parts In-Stock

1+ parts

$11.259

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2,436

$11.259

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Corohmni

South Africa . 197 parts In-Stock

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$12.510

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197

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Microchip USA

USA . 4,972 parts In-Stock

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4,972

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TANS Electronics

Latvia . 3,876 parts In-Stock

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Continental Prestige Electronics

USA . 2,201 parts In-Stock

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SupplyDigital Components

Austria . 2,133 parts In-Stock

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Kulean Microsystems

USA . 1,259 parts In-Stock

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Problanco Electronics

Mexico . 185 parts In-Stock

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UHIMA Technologies

Türkiye . 166 parts In-Stock

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Overview

Unlock the power of seamless voltage level translation with the MC10H351MG by Onsemi. Crafted with precision and expertise, this small outline rectangular package offers unparalleled quality and reliability. Ideal for a wide range of applications, this voltage translator provides customers with the perfect solution for their electronic needs. With a maximum supply voltage of 5.25V and a fast maximum delay of 2.2ns, this product ensures smooth and efficient operation. Trust Onsemi to deliver cutting-edge technology that exceeds expectations, every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material is durable and lightweight, making the product suitable for a variety of applications.

Maximum Supply Voltage: 5.25 V

High maximum supply voltage provides flexibility in power supply options and ensures reliable performance.

No. of Functions: 4

With multiple functions, this product can handle complex voltage translation tasks efficiently.

Minimum Operating Temperature: 0 °C

Can operate in a wide range of temperatures, making it suitable for different environments.

Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)

This finish provides corrosion resistance and ensures good electrical conductivity for reliable connections.

Nominal Supply Voltage: 5 V

Stable nominal supply voltage ensures consistent performance in various applications.

Maximum Delay: 2.2 ns

Low delay ensures fast and efficient voltage translation processes.

Technical Specifications

Voltage Level Translators MC10H351MG attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

2.2 ns

Interface IC Type:

JESD-30 Code:

R-PDSO-G20

JESD-609 Code:

e4

Length:

12.575 mm

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

4

No. of Terminals:

20

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP20,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Power Supplies (V):

5

Qualification:

Not Qualified

Maximum Seated Height:

2.05 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

5.25 V

Minimum Supply Voltage-1:

4.75 V

Nominal Supply Voltage-1:

5 V

Surface Mount:

YES

Technology:

ECL

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

5.275 mm

Trade Compliance

MC10H351MG Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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