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MC10H351L

Onsemi

MC10H351L by Onsemi

MC10H351L by Onsemi is a voltage level translator with 4 functions, operating b/w 4.75V to 5.25V. It has a max delay of 2.2ns and operates in temperatures from 0 °C to 75°C. Ideal for TTL/NMOS to ECL translation applications due to its complementary output polarity and ECL technology.

Median Price

$21.235

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

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Freelance Electronics

USA . 50 parts In-Stock

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$21.235

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$25.483

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Digiode

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Mentor Electronics Marketing, LLC

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NAC Semi

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Mil-Aero Solutions, Inc.

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Classic Components Corporation

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Corohmni

South Africa . 205 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Kulean Microsystems

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Overview

Unleash the power of seamless communication with the MC10H351L by Onsemi. Crafted with precision and expertise, this voltage level translator boasts unparalleled quality and reliability. With its advanced technology and versatile applications in various industries, this product offers customers unmatched value and benefits. Say goodbye to compatibility issues and hello to seamless integration with the MC10H351L. Elevate your projects to new heights with this innovative solution from Onsemi.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed body material provides durability and protection for the components inside, ensuring the product's longevity and reliability.

Maximum Supply Voltage: 5.25 V

The high maximum supply voltage of 5.25V allows for compatibility with a wide range of electronic devices and systems.

No. of Functions: 4

Having multiple functions in one product increases efficiency and saves space on a circuit board.

Package Shape: RECTANGULAR

The rectangular package shape makes it easy to integrate this voltage level translator into a circuit design and ensures a neat layout.

Output Characteristics: OPEN-EMITTER

The open-emitter output characteristics offer flexibility and compatibility with various types of circuits and connections.

Technical Specifications

Voltage Level Translators MC10H351L attributes and parameters. Explore more Voltage Level Translators devices from Onsemi

Specs

Maximum Delay:

2.2 ns

Interface IC Type:

JESD-30 Code:

R-GDIP-T20

Length:

24.511 mm

Moisture Sensitivity Level (MSL):

1

No. of Bits:

1

No. of Functions:

4

No. of Terminals:

20

Maximum Operating Temperature:

75 Cel

Minimum Operating Temperature:

0 Cel

Output Characteristics:

OPEN-EMITTER

Output Latch/Register:

NONE

Output Polarity:

COMPLEMENTARY

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Equivalence Code:

DIP20,.3

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Sub-Category:

Level Translators

Maximum Supply Voltage:

5.25 V

Minimum Supply Voltage:

4.75 V

Nominal Supply Voltage:

5 V

Maximum Supply Voltage-1:

5.25 V

Minimum Supply Voltage-1:

4.75 V

Nominal Supply Voltage-1:

5 V

Surface Mount:

NO

Technology:

ECL

Temperature Grade:

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

MC10H351L Interface ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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